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Datasheets for CS C

Datasheets found :: 3576
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2SC5625 SILICON EPITAXIAL Isahaya Electronics Corporation
92 2SC5626 2SC5626 Isahaya Electronics Corporation
93 2SC5636 FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
94 2SC5804 SMALL-SIGNAL TRANSISTOR Isahaya Electronics Corporation
95 2SC5807 SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
96 2SC5814 For Low Frequency Amplify Application Silicon NPN Epitaxial Type Isahaya Electronics Corporation
97 2SC5815 For Low Frequency Amplify Application Silicon NPN Epitaxial Type Isahaya Electronics Corporation
98 2SC5816 For Low Frequency Amplify Application Silicon NPN Epitaxial Type Isahaya Electronics Corporation
99 2SC5817 For Low Frequency Amplify Application Silicon NPN Epitaxial Type Isahaya Electronics Corporation
100 2SC5882 SILICON NPN EPITAXIAL TRANSISTOR Isahaya Electronics Corporation
101 2SC5938 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
102 2SC5938A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
103 2SC5938B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
104 2SC6046 200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. Isahaya Electronics Corporation
105 2SD1447 900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 Isahaya Electronics Corporation
106 2SD1972 2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. Isahaya Electronics Corporation
107 2SJ125 150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. Isahaya Electronics Corporation
108 2SJ145 FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE Isahaya Electronics Corporation
109 2SJ498 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. Isahaya Electronics Corporation
110 2SK2880 450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. Isahaya Electronics Corporation
111 2SK2881 For Low Frequency Amplify Application N Channel Junction type Micro(Frame type) Isahaya Electronics Corporation
112 2SK433 150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. Isahaya Electronics Corporation
113 2SK492 150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. Isahaya Electronics Corporation
114 2SK930 FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE Isahaya Electronics Corporation
115 82A436 Enhanced Graphics Controller Asiliant Technologies
116 82C435 Enhanced Graphics Controller / 82A436 Bus Interface Asiliant Technologies
117 885216 2332.5 MHz RF BAW Filter - SDARS / WCS Coexistence Qorvo
118 ACE9020B 3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems Mitel Semiconductor
119 ACE9020KG 3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems Mitel Semiconductor
120 ACE9020NP1S 3.6-5.0V; receiver and transmitter interface. For AMPS and TACS cellular telephone, 2-way radio systems Mitel Semiconductor


Datasheets found :: 3576
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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