| No. |
Part Name |
Description |
Manufacturer |
| 91 |
SF50N12 |
Silicon alloy-diffused junction thyristor 50A 1000V |
TOSHIBA |
| 92 |
SF50R12 |
Silicon alloy-diffused junction thyristor 50A 1300V |
TOSHIBA |
| 93 |
SF5B12 |
Silicon diffused junction thyristor 5A 100V |
TOSHIBA |
| 94 |
SF5D12 |
Silicon diffused junction thyristor 5A 200V |
TOSHIBA |
| 95 |
SF5F12 |
Silicon diffused junction thyristor 5A 300V |
TOSHIBA |
| 96 |
SF5G12 |
Silicon diffused junction thyristor 5A 400V |
TOSHIBA |
| 97 |
SF5J12 |
Silicon diffused junction thyristor 5A 600V |
TOSHIBA |
| 98 |
SF80D11 |
Silicon alloy-diffused junction thyristor 80A 200V |
TOSHIBA |
| 99 |
SF80G11 |
Silicon alloy-diffused junction thyristor 80A 400V |
TOSHIBA |
| 100 |
SF80J11 |
Silicon alloy-diffused junction thyristor 80A 600V |
TOSHIBA |
| 101 |
SF80L11 |
Silicon alloy-diffused junction thyristor 80A 800V |
TOSHIBA |
| 102 |
SF80N11 |
Silicon alloy-diffused junction thyristor 80A 1000V |
TOSHIBA |
| 103 |
SF80R11 |
Silicon alloy-diffused junction thyristor 80A 1300V |
TOSHIBA |
| 104 |
SF80U11 |
Silicon alloy-diffused junction thyristor 80A 1600V |
TOSHIBA |
| 105 |
TC52 |
The TC52 consists of two independent low power volt-age detectors in a space-saving 5-pin SOT-23A package. Typical supply current consumption is only 2 µA at an input voltage of 2V. The voltage detection threshold settings are factory |
Microchip |
| 106 |
TC53 |
The TC53 is a low power voltage detector. Typical supply current consumption is only 1�A at an input voltage of 2V. The voltage detection threshold setting is factory-programmed and guaranteed to ±2% accuracy. Threshold settings are a |
Microchip |
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