| No. |
Part Name |
Description |
Manufacturer |
| 91 |
3886GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 92 |
38C1 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 93 |
38C2 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER������ |
Mitsubishi Electric Corporation |
| 94 |
5 GHz Dielectric Cavity |
LTE-U, LTE-LAA Pico Cells 5 GHz Dielectric Cavity |
Skyworks Solutions |
| 95 |
5 GHz Dielectric Cavity |
LTE-U, LTE-LAA Pico Cells 5 GHz Dielectric Cavity |
Skyworks Solutions |
| 96 |
653SEA2MXX |
Optoelectronics - WDM- DWDM |
Mitsubishi Electric Corporation |
| 97 |
74273 |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET |
Mitsubishi Electric Corporation |
| 98 |
74LS |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
Mitsubishi Electric Corporation |
| 99 |
74LS244 |
OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) |
Mitsubishi Electric Corporation |
| 100 |
74LS273 |
OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET |
Mitsubishi Electric Corporation |
| 101 |
7531 GROUP |
Single Chip 8-Bit CMOS Microcomputer |
Mitsubishi Electric Corporation |
| 102 |
7531 GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
| 103 |
ADN8830 |
Thermoelectric Cooler Controller |
Analog Devices |
| 104 |
ADN8830-EVAL |
Thermoelectric Cooler Controller |
Analog Devices |
| 105 |
ADN8830ACP |
V(cc-max): 6V; thermoelectric cooler controller |
Analog Devices |
| 106 |
ADN8830ACP-EVAL |
V(cc-max): 6V; thermoelectric cooler controller |
Analog Devices |
| 107 |
ADN8830ACP-REEL |
Thermoelectric Cooler Controller |
Analog Devices |
| 108 |
ADN8830ACP-REEL7 |
V(cc-max): 6V; thermoelectric cooler controller |
Analog Devices |
| 109 |
ADN8831-EVAL |
Thermoelectric cooler (TEC) controller |
Analog Devices |
| 110 |
AN857 |
TS912 - DRIVING A PIEZOELECTRIC CELL WITH A RAIL TO RAIL OP-AMPS |
SGS Thomson Microelectronics |
| 111 |
BA01202 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 112 |
BA01203 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 113 |
BA01207 |
GaAs HBT HYBRID IC |
Mitsubishi Electric Corporation |
| 114 |
BCR08AM-14 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 115 |
BCR08AM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 116 |
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 117 |
BCR08AS-8 |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 118 |
BCR10CM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 119 |
BCR10CM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 120 |
BCR10CM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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