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Datasheets for D AS

Datasheets found :: 846
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No. Part Name Description Manufacturer
91 24LC21 Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 is a 128 x 8-bit Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of toda Microchip
92 24LC21-I/P Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... Microchip
93 24LC21-I/SN Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... Microchip
94 24LC21/P Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... Microchip
95 24LC21/SN Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... Microchip
96 24LC21T-I/SN Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... Microchip
97 24LC21T/SN Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... Microchip
98 28C64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com Microchip
99 28LV64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle Microchip
100 28LV64A Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle Microchip
101 2N2723 Two NPN silicon annular transistors connected as a darlington amplifier Motorola
102 2N2724 Two NPN silicon annular transistors connected as a darlington amplifier Motorola
103 2N2725 Two NPN silicon annular transistors connected as a darlington amplifier Motorola
104 2N2785 Two NPN silicon annular transistors connected as a darlington ampifier Motorola
105 2N4072 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
106 2N4073 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
107 37LV128 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo Microchip
108 37LV36 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m Microchip
109 37LV65 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m Microchip
110 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
111 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
112 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
113 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
114 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
115 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
116 61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY Integrated Silicon Solution Inc
117 61LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS Integrated Silicon Solution Inc
118 74170PC 16-bit register file, organized as 4 words of 4 bits each TUNGSRAM
119 AB-048 THE ACF2101 USED AS A BIPOLAR SWITCHED INTEGRATOR Burr Brown
120 ADF7010 High Performance ISM Band ASK/FSK/GFSK Transmitter IC Analog Devices


Datasheets found :: 846
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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