No. |
Part Name |
Description |
Manufacturer |
91 |
ECQV1J564JM |
Stacked Metallized Film Capacitor |
Panasonic |
92 |
ECQV1J683JM |
Stacked Metallized Film Capacitor |
Panasonic |
93 |
ECQV1J684JM |
Stacked Metallized Film Capacitor |
Panasonic |
94 |
ECQV1J823JM |
Stacked Metallized Film Capacitor |
Panasonic |
95 |
ECQV1J824JM |
Stacked Metallized Film Capacitor |
Panasonic |
96 |
ECQV50VDC |
Stacked Metallized Film Capacitor |
Panasonic |
97 |
ECQV63VDC |
Stacked Metallized Film Capacitor |
Panasonic |
98 |
ECQVXXXX |
Stacked Metallized Film Capacitor |
Panasonic |
99 |
LT1820 |
High Frequency, High Voltage Transistor for CRT Driver Application, all gold metallization |
TRW |
100 |
MKT1804 |
SMD Metallized Polyester Film Capacitor |
Vishay |
101 |
P121 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
102 |
P122 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
103 |
P123 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
104 |
P124 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
105 |
P281 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
106 |
P282 |
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
107 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
108 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
109 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
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