| No. |
Part Name |
Description |
Manufacturer |
| 91 |
DS1225AD-200IND+ |
64k Nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
| 92 |
EGS/W/N |
Military/Established Reliability, MIL-R-39007 Qual., Type RWR, R Level, Meets Solvent Resistance of MIL-STD-202 (Method 215), 100% Power Stabilization and Screening Test |
Vishay |
| 93 |
EN201D-20A |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
Fuji Electric |
| 94 |
EN221D-20A |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
Fuji Electric |
| 95 |
EN241D-20A |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
Fuji Electric |
| 96 |
EN271D-20A |
Z-TRAP ENE(Nominal varistor voltage 200 to 470V |
Fuji Electric |
| 97 |
ENE201D-20A |
Z-TRAP ENE series |
Fuji Electric |
| 98 |
ENE221D-20A |
Z-TRAP ENE series |
Fuji Electric |
| 99 |
ENE241D-20A |
ZTRAP |
Fuji Electric |
| 100 |
ENE271D-20A |
Z-TRAP ENE series |
Fuji Electric |
| 101 |
ENE361D-20A |
Z-TRAP ENE series |
Fuji Electric |
| 102 |
ENE391D-20A |
Z-TRAP ENE series |
Fuji Electric |
| 103 |
ENE431D-20A |
ZTRAP |
Fuji Electric |
| 104 |
ENE471D-20A |
ZTRAP |
Fuji Electric |
| 105 |
ESABR246D-20G3-6V-009L |
Relays |
Microsemi |
| 106 |
ESS/W/N |
Military/Established Reliability, MIL-R-39007 Qual., Type RWR, R Level, Meets Solvent Resistance of MIL-STD-202 (Method 215), 100% Power Stabilization and Screening Test |
Vishay |
| 107 |
FLASH-SHIELD-201118 |
FLASH-SHIELD-201118 |
etc |
| 108 |
FLASH-SHIELD-201118 |
FLASH-SHIELD-201118 |
etc |
| 109 |
GAL16V8D-20LD/833 |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 110 |
GAL16V8D-20LD_883 |
High performance E2CMOS PLD generic array logic, 20ns |
Lattice Semiconductor |
| 111 |
GAL16V8D-20LR/833 |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 112 |
GAL16V8D-20LR_883 |
High performance E2CMOS PLD generic array logic, 20ns |
Lattice Semiconductor |
| 113 |
GAL16V8D-20QJI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 114 |
GAL16V8D-20QPI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 115 |
GAL22V10D-20LJI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 116 |
GAL22V10D-20LPI |
High Performance E2CMOS PLD Generic Array Logic |
Lattice Semiconductor |
| 117 |
GS8161Z18D-200I |
6.5ns 200MHz 1M x 18 18MB pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 118 |
GS8161Z32D-200I |
6.5ns 200MHz 512K x 32 18MB pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 119 |
GS8161Z36D-200I |
6.5ns 200MHz 512K x 36 18MB pipelined and flow through synchronous NBT SRAM |
GSI Technology |
| 120 |
GS816218D-200 |
6.5ns 200MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
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