No. |
Part Name |
Description |
Manufacturer |
91 |
LTC4065LEDC-4.1#TRPBF |
Standalone 250mA Li-Ion Battery Charger in 2 × 2 DFN |
Linear Technology |
92 |
LTC4069EDC-4.4 |
Standalone 750mA Li-Ion Battery Charger in 2 × 2 DFN with NTC Thermistor Input |
Linear Technology |
93 |
LTC4069EDC-4.4#PBF |
Standalone 750mA Li-Ion Battery Charger in 2 × 2 DFN with NTC Thermistor Input |
Linear Technology |
94 |
LTC4069EDC-4.4#TR |
Standalone 750mA Li-Ion Battery Charger in 2 × 2 DFN with NTC Thermistor Input |
Linear Technology |
95 |
LTC4069EDC-4.4#TRMPBF |
Standalone 750mA Li-Ion Battery Charger in 2 × 2 DFN with NTC Thermistor Input |
Linear Technology |
96 |
LTC4069EDC-4.4#TRPBF |
Standalone 750mA Li-Ion Battery Charger in 2 × 2 DFN with NTC Thermistor Input |
Linear Technology |
97 |
MASW4030G |
DC-4 GHz GaAs DPDT switch |
MA-Com |
98 |
MWA110 |
DC-400MHz wideband general purpose hybrid amplifier |
Motorola |
99 |
MWA120 |
DC-400MHz wideband general purpose hybrid amplifier |
Motorola |
100 |
PE4302 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
101 |
PE4302-00 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
102 |
PE4302-01 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
103 |
PE4302-02 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
104 |
PE4302-51 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
105 |
PE4302-52 |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
106 |
PE4302DS |
50 OHM RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ |
etc |
107 |
SGA-0163 |
DC-4500 MHz, 2.1V silicon germanium cascadeable gain block |
Stanford Microdevices |
108 |
SGA-1263 |
DC-4000 MHz, 2.8V silicon germanium HBT cascadeable gain block |
Stanford Microdevices |
109 |
SGA-4386 |
DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 14.6 dB at 1950 MHz |
Stanford Microdevices |
110 |
SGA-4486 |
DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 15.9 dB at 1950 MHz |
Stanford Microdevices |
111 |
SGA-4586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +29 dBm typ at 850 MHz |
Stanford Microdevices |
112 |
SGA-5263 |
DC-4500 MHz, silicon germanium cascadeable gain block. High output intercept: 29 dBm typ at 1950 MHz |
Stanford Microdevices |
113 |
SGA-5286 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.0 dBm typ at 850 MHz |
Stanford Microdevices |
114 |
SGA-5489 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz |
Stanford Microdevices |
115 |
SGA-5586 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz |
Stanford Microdevices |
116 |
SGA-5589 |
DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz |
Stanford Microdevices |
117 |
SGA-6289 |
DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 12.6 dB at 1950 MHz |
Stanford Microdevices |
118 |
SGA-6389 |
DC-4000 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 14.0 dB at 1950 MHz |
Stanford Microdevices |
119 |
SGA-6486 |
DC-4500 MHZ CASCADABLE SIGE HBT MMIC AMPLIFIER |
Stanford Microdevices |
120 |
SGA-6589 |
DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz |
Stanford Microdevices |
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