| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N3338B |
Leaded Zener Diode Power |
Central Semiconductor |
| 92 |
1N3338RB |
Leaded Zener Diode Power |
Central Semiconductor |
| 93 |
1N3339B |
Leaded Zener Diode Power |
Central Semiconductor |
| 94 |
1N3340B |
Leaded Zener Diode Power |
Central Semiconductor |
| 95 |
1N3340RB |
Leaded Zener Diode Power |
Central Semiconductor |
| 96 |
1N3343B |
Leaded Zener Diode Power |
Central Semiconductor |
| 97 |
1N3343RB |
Leaded Zener Diode Power |
Central Semiconductor |
| 98 |
1N3344B |
Leaded Zener Diode Power |
Central Semiconductor |
| 99 |
1N3350B |
Leaded Zener Diode Power |
Central Semiconductor |
| 100 |
1N3350RB |
Leaded Zener Diode Power |
Central Semiconductor |
| 101 |
1N5719 |
Diode PIN Attenuator/Switch 150V 2-Pin Case 15 Bag |
New Jersey Semiconductor |
| 102 |
1N5767 |
Diode PIN Attenuator/Switch 100V 2-Pin |
New Jersey Semiconductor |
| 103 |
2-AA113 |
HF germanium diode pair for high-resistance radio detector and discriminator circuits |
TUNGSRAM |
| 104 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
| 105 |
2-AA118 |
HF Germanium tip diode pair for phase discriminator circuits |
TUNGSRAM |
| 106 |
2-AA119 |
HF germanium tip diode pair for high-resistance ratio detector and discriminator circuits |
TUNGSRAM |
| 107 |
3N161 |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
Intersil |
| 108 |
3N172 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
| 109 |
3N172 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Intersil |
| 110 |
3N172-73 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
| 111 |
3N173 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Calogic |
| 112 |
3N173 |
Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch |
Intersil |
| 113 |
8481D |
8481D Diode Power Sensor, 10 MHz to 18 GHz |
Agilent (Hewlett-Packard) |
| 114 |
8485D |
8485D Diode Power Sensor, 50 MHz to 26.5 GHz |
Agilent (Hewlett-Packard) |
| 115 |
8487D |
8487D Diode Power Sensor, 50 MHz to 50 GHz |
Agilent (Hewlett-Packard) |
| 116 |
AD549SH_883B |
18V; 500mW; ultra low input bias current operational amplifier. For electrometer amplifiers, photodiode preamp, pH electrode buffer, vacuum Ion gage measurement |
Analog Devices |
| 117 |
AD822ARM |
18V; single supply, rail to rail low power FET-input Op Amp. For battery-powered precision instrumentation, photodiode preamps, active filters, 12/14-bit data acquisition systems |
Analog Devices |
| 118 |
BAR65-02 |
Silicon RF Switching Diode Preliminary data (Low loss/ low capacitance PIN-diode Band switch for TV-tuners) |
Siemens |
| 119 |
BAR65-02W |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners) |
Siemens |
| 120 |
BAR65-07 |
Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-Diode Band switch for TV-tuners) |
Siemens |
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