No. |
Part Name |
Description |
Manufacturer |
91 |
74LS89 |
64-Bit Random Access Memory(Open Collector) |
Signetics |
92 |
74S189DC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
93 |
74S189DC |
64-BIT RANDOM ACCESS MEMORY(With 3-State Outputs) |
Unknow |
94 |
74S189DC |
64-BIT RANDOM ACCESS MEMORY(With 3-State Outputs) |
Unknow |
95 |
74S189FC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
96 |
74S189FC |
64-BIT RANDOM ACCESS MEMORY(With 3-State Outputs) |
Unknow |
97 |
74S189PC |
V(cc): +5.0V; 64-bit random access memory (with 3-state outputs) |
Fairchild Semiconductor |
98 |
74S189PC |
64-BIT RANDOM ACCESS MEMORY(With 3-State Outputs) |
Unknow |
99 |
74S289 |
64-BIT random access memory (With Open-Collector Outputs) |
Fairchild Semiconductor |
100 |
74S289 |
64BIT RANDOM ACCESS MEMORY |
Unknow |
101 |
74S89 |
64-Bit Random Access Memory(Open Collector) |
Signetics |
102 |
82S130A |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
103 |
82S130N |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
104 |
82S131A |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
105 |
82S131N |
V(cc): +7.0V; 2K-bit TTL bipolar PROM. For phototyping / volume production, sequential controllers, microprogramming, hardwired algorithms, control store, random logic, code conversion |
Philips |
106 |
93479ADC |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
107 |
93479ADMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
108 |
93479ALMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
109 |
93479DC |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
110 |
93479DMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
111 |
93479LMQB |
-0.5 V to +7 V, 256 x 9-bit static random access memory |
National Semiconductor |
112 |
93L415ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
113 |
93L415APC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
114 |
93L422ADC |
-0.5 V to +7 V, 256 x 4-bit static random access memory |
National Semiconductor |
115 |
93L422APC |
-0.5 V to +7 V, 256 x 4-bit static random access memory |
National Semiconductor |
116 |
93L425ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
117 |
93L425APC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
118 |
ADIS16300 |
Four Degrees of Freedom Inertial Sensor |
Analog Devices |
119 |
ADIS16305 |
Precision Four Degrees of Freedom Sensor |
Analog Devices |
120 |
ADIS16334 |
Low-profile Six Degree of Freedom Inertial Sensor |
Analog Devices |
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