No. |
Part Name |
Description |
Manufacturer |
91 |
1N975 |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
92 |
1N975A |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
93 |
1N975B |
39.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
94 |
1N976 |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
95 |
1N976A |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
96 |
1N976B |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
97 |
1N977 |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
98 |
1N977A |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
99 |
1N977B |
47.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
100 |
28LV256JC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
101 |
28LV256JI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
102 |
28LV256JM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
103 |
28LV256PC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
104 |
28LV256PI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
105 |
28LV256PM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
106 |
28LV256SC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
107 |
28LV256SI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
108 |
28LV256SM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
109 |
28LV256TC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
110 |
28LV256TI-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
111 |
28LV256TM-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
112 |
2N5442 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
113 |
2N5445 |
Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. |
Motorola |
114 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
115 |
3EZ400D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 1% tolerance. |
Motorola |
116 |
3EZ400D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 10% tolerance. |
Motorola |
117 |
3EZ400D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 2% tolerance. |
Motorola |
118 |
3EZ400D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. |
Motorola |
119 |
ADG774A |
Low Voltage 400 Mhz Quad 2:1 MUXwith 3 nS Switching Time |
Analog Devices |
120 |
ADG774ABRQ |
Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time |
Analog Devices |
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