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Datasheets for E 400

Datasheets found :: 394
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 1N975 39.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
92 1N975A 39.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
93 1N975B 39.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
94 1N976 43.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
95 1N976A 43.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
96 1N976B 43.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
97 1N977 47.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
98 1N977A 47.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
99 1N977B 47.0V Standard Grade 400 mW Axial Zener Diode Continental Device India Limited
100 28LV256JC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
101 28LV256JI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
102 28LV256JM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
103 28LV256PC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
104 28LV256PI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
105 28LV256PM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
106 28LV256SC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
107 28LV256SI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
108 28LV256SM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
109 28LV256TC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
110 28LV256TI-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
111 28LV256TM-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
112 2N5442 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
113 2N5445 Triac. Silicon bidirectional triode thyristor. Peak repetitive off-state voltage 400 V. Motorola
114 2N6073 Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. Motorola
115 3EZ400D1 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 1% tolerance. Motorola
116 3EZ400D10 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 10% tolerance. Motorola
117 3EZ400D2 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. 2% tolerance. Motorola
118 3EZ400D5 3 watt Surmetic 30 silicon zener diode. Nom zener voltage 400 V. Motorola
119 ADG774A Low Voltage 400 Mhz Quad 2:1 MUXwith 3 nS Switching Time Analog Devices
120 ADG774ABRQ Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time Analog Devices


Datasheets found :: 394
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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