No. |
Part Name |
Description |
Manufacturer |
91 |
2SC5437 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
92 |
2SC5658FHA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
93 |
2SC5658FHAT2L |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
94 |
2SC5658T2L |
NPN General Purpose Amplification Transistor |
ROHM |
95 |
2SCR522EB |
NPN General Purpose Amplification Transistor |
ROHM |
96 |
2SCR522EBTL |
NPN General Purpose Amplification Transistor |
ROHM |
97 |
2SCR522M |
NPN General Purpose Amplification Transistor |
ROHM |
98 |
2SCR522MT2L |
NPN General Purpose Amplification Transistor |
ROHM |
99 |
2SCR522UB |
NPN General Purpose Amplification Transistor |
ROHM |
100 |
2SCR522UBTL |
NPN General Purpose Amplification Transistor |
ROHM |
101 |
2SCR523EB |
NPN General Purpose Amplification Transistor |
ROHM |
102 |
2SCR523EBTL |
NPN General Purpose Amplification Transistor |
ROHM |
103 |
2SCR523M |
NPN General Purpose Amplification Transistor |
ROHM |
104 |
2SCR523MT2L |
NPN General Purpose Amplification Transistor |
ROHM |
105 |
2SCR523UB |
NPN General Purpose Amplification Transistor |
ROHM |
106 |
2SCR523UBTL |
NPN General Purpose Amplification Transistor |
ROHM |
107 |
2SD0814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
108 |
2SD2675 |
General purpose amplification (30V/ 1A) |
ROHM |
109 |
2SD2703 |
General purpose amplification (30V, 1A) |
ROHM |
110 |
2SD661 |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
111 |
2SD661 |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
112 |
2SD661A |
Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
113 |
2SD661A |
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
Panasonic |
114 |
2SD814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
115 |
2SD814 |
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
Panasonic |
116 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
117 |
3SK202 |
Field-effect Transistor - Silicon N Channel 4-pole MOS Type - For VHF band high-gain low-noise amplification |
Panasonic |
118 |
BC848BWT106 |
NPN General Purpose Amplification Transistor |
ROHM |
119 |
BC858BWT106 |
PNP General Purpose Amplification Transistor |
ROHM |
120 |
EML22 |
NPN General Purpose Amplification Transistor + Zener Diode |
ROHM |
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