| No. |
Part Name |
Description |
Manufacturer |
| 91 |
BSY58 |
Double-diffused epitaxial NPN silicon RF Transistor in planar technology |
TUNGSRAM |
| 92 |
BU1004 |
βU1004 2 NPN 150mA transistors 3 base-diffusion resistors |
IPRS Baneasa |
| 93 |
BU1005 |
βU1005 6 base-difusion resistors |
IPRS Baneasa |
| 94 |
BZX51 |
Silicon reference-diodes with small temperature coefficient for voltage regulation |
AEG-TELEFUNKEN |
| 95 |
BZX52 |
Silicon reference-diodes with small temperature coefficient for voltage regulation |
AEG-TELEFUNKEN |
| 96 |
BZX53 |
Silicon reference-diodes with small temperature coefficient for voltage regulation |
AEG-TELEFUNKEN |
| 97 |
BZX54 |
Silicon reference-diodes with small temperature coefficient for voltage regulation |
AEG-TELEFUNKEN |
| 98 |
CDD120 |
Diode-Diode Modules |
etc |
| 99 |
CDD120N08 |
Diode-Diode Modules |
etc |
| 100 |
CDD120N12 |
Diode-Diode Modules |
etc |
| 101 |
CDD120N14 |
Diode-Diode Modules |
etc |
| 102 |
CDD120N16 |
Diode-Diode Modules |
etc |
| 103 |
CDD120N16 |
Diode-Diode Modules |
etc |
| 104 |
CDD120N18 |
Diode-Diode Modules |
etc |
| 105 |
ENA2048 |
Touch Sensors, Capacitance-Digital- Converter for Electrostatic Capacitive |
ON Semiconductor |
| 106 |
ENA2089 |
Capacitance-Digital-Converter IC for Electrostatic Capacitive Touch Sensors |
ON Semiconductor |
| 107 |
ENA2161 |
Capacitance-Digital-Converter IC for Electrostatic Capacitive Touch Sensors |
ON Semiconductor |
| 108 |
ENA2162 |
Capacitance-Digital-Converter IC for Electrostatic Capacitive Touch Sensors |
ON Semiconductor |
| 109 |
HD14553 |
Three-Digit BCD Counter |
Hitachi Semiconductor |
| 110 |
HD14553B |
Three-Digit BCD Counter |
Hitachi Semiconductor |
| 111 |
ISL5239 |
Pre-Distortion Linearizer, Output Sample Rates Up to 125MSPS, Full 20MHz Signal Bandwidth |
Intersil |
| 112 |
ISL5239EVAL1 |
Pre-Distortion Linearizer |
Intersil |
| 113 |
ISL5239KI |
Pre-Distortion Linearizer |
Intersil |
| 114 |
K4H510638E-TC/LA2 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
| 115 |
K4H510638E-TC/LAA |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
| 116 |
K4H510638E-TC/LB0 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
| 117 |
K4H510738E |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
| 118 |
K4H510738E-TC/LA2 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
| 119 |
K4H510738E-TC/LAA |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
| 120 |
K4H510738E-TC/LB0 |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8) |
Samsung Electronic |
| | | |
