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Datasheets for E34

Datasheets found :: 171
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No. Part Name Description Manufacturer
91 MJE344 NPN High Voltage Power Transistor National Semiconductor
92 MJE344 Trans GP BJT NPN 200V 0.5A 3-Pin TO-126 New Jersey Semiconductor
93 MJE344 Power 1A 200V NPN ON Semiconductor
94 MJE344-D Plastic NPN Silicon Medium-Power Transistor ON Semiconductor
95 MJE3440 Leaded Power Transistor General Purpose Central Semiconductor
96 MJE3440 0.3A NPN Silicon High-Voltage Power Transistor 15W Motorola
97 MJE3440 NPN Power Transistor TO-126 National Semiconductor
98 MJE3440 NPN High Voltage Power Transistor National Semiconductor
99 MJE3440 Trans GP BJT NPN 250V 0.3A 3-Pin(3+Tab) SOT-32 New Jersey Semiconductor
100 MJE3440 SILICON NPN TRANSISTOR SGS Thomson Microelectronics
101 MJE3440 SILICON NPN TRANSISTOR ST Microelectronics
102 MJE344K 0.5A NPN Silicon Medium-Power Transistor Motorola
103 MJE350 20.000W Switching PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - 240 hFE. Complementary MJE340 Continental Device India Limited
104 NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NEC
105 NE34018-T1 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NEC
106 NE34018-T1-63 GaAs HJ-FET L to S band low noise amplifier. Idss range 30-65 mA. NEC
107 NE34018-T1-64 GaAs HJ-FET L to S band low noise amplifier. Idss range 60-120 mA. NEC
108 NE34018-T2 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NEC
109 NE3451600 0.1-4.0 GHz, 10 W, L,S-band power GaAs MESFET NEC
110 NE345L-10B 0.1-4.0 GHz, 10 W, L,S-band power GaAs MESFET NEC
111 NE345L-20B 0.1-4.0 GHz, 20 W, L,S-band power GaAs MESFET NEC
112 NTE340 Silicon NPN Transistor RF Power Output, High Frequency NTE Electronics
113 NTE342 Silicon NPN Transistor RF Power Output (PO = 6W, 175MHz) NTE Electronics
114 NTE343 Silicon NPN Transistor RF Power Output (PO = 14W, 175MHz) NTE Electronics
115 NTE345 Silicon NPN Transistor RF Power Amp, Driver NTE Electronics
116 NTE346 Silicon NPN Transistor RF Power Transistor NTE Electronics
117 NTE3470 Integrated Circuit Floppy Disk Read Amplifier System NTE Electronics
118 NTE348 Silicon NPN Transistor RF Power Amp, Driver NTE Electronics
119 NTE349 Silicon NPN Transistor RF Power Amp, Driver NTE Electronics
120 NX8564LE342-BC EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1534.25 nm. Frequency 195.40 THz. FC-UPC connector. NEC


Datasheets found :: 171
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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