| No. |
Part Name |
Description |
Manufacturer |
| 91 |
MJE5555 |
Switching Transistor |
Korea Electronics (KEC) |
| 92 |
NE550 |
Precision voltage regulator |
Signetics |
| 93 |
NE5500179A |
SILICON POWER MOS FET |
NEC |
| 94 |
NE5500179A-T1 |
SILICON POWER MOS FET |
NEC |
| 95 |
NE550A |
Precision voltage regulator |
Signetics |
| 96 |
NE550L |
Precision voltage regulator |
Signetics |
| 97 |
NE5510179A-T1 |
3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
NEC |
| 98 |
NE5510279A-T1 |
3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. |
NEC |
| 99 |
NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 100 |
NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 101 |
NE5511279A-T1A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 102 |
NE5512 |
Dual high-performance operational amplifier |
Philips |
| 103 |
NE5512D |
Dual high-performance operational amplifier |
Philips |
| 104 |
NE5512N |
Dual high-performance operational amplifier |
Philips |
| 105 |
NE5514 |
Quad high-performance operational amplifier |
Philips |
| 106 |
NE5514D |
Quad high-performance operational amplifier |
Philips |
| 107 |
NE5514N |
Quad high-performance operational amplifier |
Philips |
| 108 |
NE5514NB |
Quad high-performance operational amplifier |
Philips |
| 109 |
NE5517 |
Dual Operational Transconductance Amplifier |
ON Semiconductor |
| 110 |
NE5517 |
Dual operational transconductance amplifier |
Philips |
| 111 |
NE5517A |
Dual operational transconductance amplifier |
Philips |
| 112 |
NE5517AN |
Dual operational transconductance amplifier |
Philips |
| 113 |
NE5517D |
Dual operational transconductance amplifier |
Philips |
| 114 |
NE5517N |
Dual operational transconductance amplifier |
Philips |
| 115 |
NE5520279A |
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 116 |
NE5520279A-T1 |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 117 |
NE5520379A-T1A |
NEC's 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. |
NEC |
| 118 |
NE5521 |
LVDT signal conditioner |
Philips |
| 119 |
NE5521D |
LVDT signal conditioner |
Philips |
| 120 |
NE5521N |
LVDT signal conditioner |
Philips |
| | | |
