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Datasheets for EMPERATURE DE

Datasheets found :: 127
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No. Part Name Description Manufacturer
91 AS273H5G13 Over-temperature detector ASTEC Semiconductor
92 AS273H5GA Over-temperature detector ASTEC Semiconductor
93 AS273H5GB Over-temperature detector ASTEC Semiconductor
94 AS273H5GT Over-temperature detector ASTEC Semiconductor
95 AS273H5LP13 Over-temperature detector ASTEC Semiconductor
96 AS273H5LPA Over-temperature detector ASTEC Semiconductor
97 AS273H5LPB Over-temperature detector ASTEC Semiconductor
98 AS273H5LPT Over-temperature detector ASTEC Semiconductor
99 FMKS-2052 Diodes with temperature detection Sanken
100 FMKS-2102 Diodes with temperature detection Sanken
101 FMKS-2152 Diodes with temperature detection Sanken
102 TC07 The TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished with external resistors connected from the temperature setpoint input (TSET) and the hysteresi Microchip
103 TC07COA TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... Microchip
104 TC07CUA TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... Microchip
105 TC07EOA TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... Microchip
106 TC07EUA TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... Microchip
107 TC07VOA TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... Microchip
108 TC07VOA713 TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... Microchip
109 TC07VUA TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... Microchip
110 TC620 The TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC thermistor for remo Microchip
111 TC621 The TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC thermistor for remo Microchip
112 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
113 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
114 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
115 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
116 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
117 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
118 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
119 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
120 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 127
Page: | 1 | 2 | 3 | 4 | 5 |



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