No. |
Part Name |
Description |
Manufacturer |
91 |
1N188 |
Photosensitive Device IR(dark)=20uA 40V, Sensitivity = 10uA/mW |
Motorola |
92 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
93 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
94 |
1N2175 |
Photosensitive Device IR(dark)=0.5µA 50V, Sensitivity=0.22µA/mW/cm2 |
Motorola |
95 |
1N2175 |
Photosensitive Device IR(dark)=0.5µA 50V, Sensitivity=0.22µA/mW/cm2 |
Motorola |
96 |
1N3734 |
Photosensitive Device BV=100V, Sensitivity=0.05µA/fc |
Motorola |
97 |
1N3734 |
Photosensitive Device BV=100V, Sensitivity=0.05µA/fc |
Motorola |
98 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
99 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
100 |
1N77A |
Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V |
Motorola |
101 |
1N77B |
Photosensitive Device; VF=10V 10mA, IR(dark)=30uA 50V |
Motorola |
102 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
103 |
1N85 |
Photosensitive Device; IR(dark)=20uA 90V, Sensiviry = 0.35uA/mW 90V |
Motorola |
104 |
1PM CASE |
CASE SHAPE AND DIMENSIONS |
IPRS Baneasa |
105 |
20 DIP |
20DIP Package Dimensions |
Samsung Electronic |
106 |
20 SOP |
Package Dimensions |
Samsung Electronic |
107 |
20-03 |
Motorola case, dimensions, similar with TO-206AF |
Motorola |
108 |
200SOE |
PACKAGE SHAPE AND DIMENSIONS |
TRW |
109 |
2032E |
In-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
110 |
2032VE |
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD |
Lattice Semiconductor |
111 |
2032VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
112 |
2064VE |
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD |
Lattice Semiconductor |
113 |
2064VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
114 |
2096E |
In-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
115 |
2096VE |
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
116 |
2096VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
117 |
20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
Motorola |
118 |
20PM CASE |
CASE SHAPE AND DIMENSIONS |
IPRS Baneasa |
119 |
21 ZSIP-SH |
Package Dimensions |
Samsung Electronic |
120 |
211-07 |
Motorola case, dimensions, similar with .380 FLANGE |
Motorola |
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