Datasheets for ER GEN

Datasheets found :: 893

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No.	Part Name	Description	Manufacturer
91	2N5470	UHF Power Generation Using RF Power Transistor - Application Note	RCA Solid State
92	2N5575	High-power general purpose NPN transistor, metal case	IPRS Baneasa
93	2N5576	High-power general purpose NPN transistor, metal case	IPRS Baneasa
94	2N5577	High-power general purpose NPN transistor, metal case	IPRS Baneasa
95	2N5578	High-power general purpose NPN transistor, metal case	IPRS Baneasa
96	2N5579	High-power general purpose NPN transistor, metal case	IPRS Baneasa
97	2N5580	High-power general purpose NPN transistor, metal case	IPRS Baneasa
98	2N5919	UHF Power Generation Using RF Power Transistor - Application Note	RCA Solid State
99	2N6254	High Power General Purpose NPN Transistor - metal case	IPRS Baneasa
100	2N6257	High Power General Purpose NPN Transistor - metal case	IPRS Baneasa
101	2N6258	High-power general purpose NPN transistor, metal case	IPRS Baneasa
102	2N6259	High-power general purpose NPN transistor, metal case	IPRS Baneasa
103	2N6262	High Power General Purpose NPN Transistor - metal case	IPRS Baneasa
104	2N6371	High Power General Purpose NPN Transistor - metal case	IPRS Baneasa
105	2N929	Silicon low power general purpose NPN transistor - metal case	IPRS Baneasa
106	2N930	Silicon low power general purpose NPN transistor - metal case	IPRS Baneasa
107	2SB1407(L)	Bipolar power general purpose transistor	Hitachi Semiconductor
108	2SB1407(S)	Bipolar power general purpose transistor	Hitachi Semiconductor
109	2SB1409(L)	Bipolar power general purpose transistor	Hitachi Semiconductor
110	2SB1409(S)	Bipolar power general purpose transistor	Hitachi Semiconductor
111	2SC9011	Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic =	USHA India LTD
112	2SD2121(L)	Bipolar power general purpose transistor	Hitachi Semiconductor
113	2SD2121(S)	Bipolar power general purpose transistor	Hitachi Semiconductor
114	2SD2122(L)	Bipolar power general purpose transistor	Hitachi Semiconductor
115	2SD2122(S)	Bipolar power general purpose transistor	Hitachi Semiconductor
116	2SD2123(L)	Bipolar power general purpose transistor	Hitachi Semiconductor
117	2SD2123(S)	Bipolar power general purpose transistor	Hitachi Semiconductor
118	2SD639	Silicon PNP epitaxial planer type(For low-power general amplification)	Panasonic
119	2SD639	Silicon NPN epitaxial planer type(For medium-power general amplification)	Panasonic
120	3N247-M	Leaded Bridge Rectifier General Purpose	Central Semiconductor

Datasheets found :: 893

Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |