No. |
Part Name |
Description |
Manufacturer |
91 |
2N5470 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
92 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
93 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
94 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
95 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
96 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
97 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
98 |
2N5919 |
UHF Power Generation Using RF Power Transistor - Application Note |
RCA Solid State |
99 |
2N6254 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
100 |
2N6257 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
101 |
2N6258 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
102 |
2N6259 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
103 |
2N6262 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
104 |
2N6371 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
105 |
2N929 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
106 |
2N930 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
107 |
2SB1407(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
108 |
2SB1407(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
109 |
2SB1409(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
110 |
2SB1409(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
111 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
112 |
2SD2121(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
113 |
2SD2121(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
114 |
2SD2122(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
115 |
2SD2122(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
116 |
2SD2123(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
117 |
2SD2123(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
118 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
119 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
120 |
3N247-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
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