No. |
Part Name |
Description |
Manufacturer |
91 |
2N6262 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
92 |
2N6371 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
93 |
2N929 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
94 |
2N930 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
95 |
2SB1407(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
96 |
2SB1407(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
97 |
2SB1409(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
98 |
2SB1409(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
99 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
100 |
2SD2121(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
101 |
2SD2121(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
102 |
2SD2122(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
103 |
2SD2122(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
104 |
2SD2123(L) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
105 |
2SD2123(S) |
Bipolar power general purpose transistor |
Hitachi Semiconductor |
106 |
2SD639 |
Silicon PNP epitaxial planer type(For low-power general amplification) |
Panasonic |
107 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
108 |
3N247-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
109 |
3N248-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
110 |
3N249-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
111 |
3N250-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
112 |
3N251-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
113 |
3N252-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
114 |
3N254-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
115 |
3N255-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
116 |
3N256-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
117 |
3N257-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
118 |
3N258-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
119 |
3N259-M |
Leaded Bridge Rectifier General Purpose |
Central Semiconductor |
120 |
AH1888 |
MICROPOWER GENERAL-SENSITIVE HALL-EFFECT SWITCH |
Diodes |
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