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Datasheets for F-S

Datasheets found :: 598
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No. Part Name Description Manufacturer
91 EN6042 Motor Driver, 2-Phase, Full / Half-Stepping, Unipolar ON Semiconductor
92 EN7464 Motor Driver, 2-Phase, Full / Half-Stepping, Unipolar ON Semiconductor
93 ENA1136B Motor Driver, 2-Phase, Full / Half-Stepping, Unipolar ON Semiconductor
94 F-51320GNF-S-AD 0.3-7.0V 20.0mA LCD module Optrex Corporation
95 F-51477GNF-SLY-AA LCD MODULE TECHNICAL SPECIFICATION Optrex Corporation
96 G3VM-WF-S MOSFET RELAY OMRON Electronics
97 HL, HLM Industrial Power, Flat (HL) and Miniature Flat (HLN), High Power/Size Ratio, Self-stacking Hardware, Non-Inductively Wound Models Available Vishay
98 HY5V16CF-S SDRAM - 16Mb Hynix Semiconductor
99 HY5V26C(L/S)F-S(I) SDRAM - 128Mb Hynix Semiconductor
100 HY5V26C(L/S)F-S(I) SDRAM - 128Mb Hynix Semiconductor
101 HY5V28C(L)F-S SDRAM - 128Mb Hynix Semiconductor
102 HY5V56B(L/S)F-S(I) SDRAM - 256Mb Hynix Semiconductor
103 HY5V56B(L/S)F-S(I) SDRAM - 256Mb Hynix Semiconductor
104 HY5V58B(L)F-S SDRAM - 256Mb Hynix Semiconductor
105 HY5V62CF-S SDRAM - 64Mb Hynix Semiconductor
106 ITT9311 MSI One-Of-Sixteen Decoder ITT Semiconductors
107 K4M28163LF-S 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA Samsung Electronic
108 K4S56323LF-S 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA Samsung Electronic
109 K4S643233F-SE/I 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM Samsung Electronic
110 K4S643233F-SE/N 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM Samsung Electronic
111 K4S643233F-SE/P1H 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM Samsung Electronic
112 K4S643233F-SE/P1L 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM Samsung Electronic
113 K4S643233F-SE/P75 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM Samsung Electronic
114 L110C CCD monlithic self-scanning light receivers, possibly equivalent CD110 RFT
115 L133C CCD monlithic self-scanning light receivers, possibly equivalent CD133 RFT
116 LM119F-S High Speed Dual Comparator National Semiconductor
117 LY251 Photocoupler. Input continuous LED current 50 mA, input peak LED current 1000 mA, input LED reverse voltage 6 V. Off-state output terminal voltage 600 V, output peak repetitive surge current 1 A, output peak load current 0.6 A. Letex Technology
118 LY252 Photocoupler. High repetitive peak off-state voltage 400 V min. 1500 Vrms Input/output isolation. Letex Technology
119 M38030FF-SP RAM size: 192bytes; single-chip 8-bit CMOS microcomputer Mitsubishi Electric Corporation
120 M38031FF-SP RAM size: 256bytes; single-chip 8-bit CMOS microcomputer Mitsubishi Electric Corporation


Datasheets found :: 598
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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