No. |
Part Name |
Description |
Manufacturer |
91 |
MRF899_D |
MRF899 900 MHz, 150 W, 26 V RF Power Transistor - Archived |
Motorola |
92 |
MRF899_D |
MRF899 900 MHz, 150 W, 26 V RF Power Transistor - Archived |
Motorola |
93 |
MRF89XAM8A |
Wireless Modules |
Microchip |
94 |
MRF89XAM8A-I/RM |
Wireless Modules |
Microchip |
95 |
MRF89XAM8AT-I/RM |
Wireless Modules |
Microchip |
96 |
MRF89XAM9A |
Wireless Modules |
Microchip |
97 |
MRF89XAM9A-I/RM |
Wireless Modules |
Microchip |
98 |
MRF89XAM9AT-I/RM |
Wireless Modules |
Microchip |
99 |
N74F8960 |
Octal latched bidirectional Futurebus transceivers 3-State open-collector |
Philips |
100 |
N74F8960A |
Octal latched bidirectional Futurebus transceivers 3-State open-collector |
Philips |
101 |
N74F8960F |
Octal latched bidirectional Futurebus transceivers (3-State + open-collector) |
Philips |
102 |
N74F8960N |
Octal latched bidirectional Futurebus transceivers 3-State open-collector |
Philips |
103 |
N74F8961A |
Octal latched bidirectional Futurebus transceivers 3-State open-collector |
Philips |
104 |
N74F8961F |
Octal latched bidirectional Futurebus transceivers (3-State + open-collector) |
Philips |
105 |
N74F8961N |
Octal latched bidirectional Futurebus transceivers (3-State + open-collector) |
Philips |
106 |
N74F8962A |
9-Bit latched bidirectional Futurebus transceivers open-collector |
Philips |
107 |
N74F8962Y |
9-Bit latched bidirectional Futurebus transceivers open-collector |
Philips |
108 |
N74F8963A |
9-Bit latched bidirectional Futurebus transceivers open-collector |
Philips |
109 |
N74F8963Y |
9-Bit latched bidirectional Futurebus transceivers open-collector |
Philips |
110 |
N74F8965A |
9-Bit address/data Futurebus transceiver, ADT |
Philips |
111 |
N74F8966A |
9-Bit address/data Futurebus transceiver, ADT |
Philips |
112 |
NX8562LF895-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1589.56 nm. Frequency 188.60 THz. Anode floating. FC-PC connector. |
NEC |
113 |
NX8563LF895-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1589.56 nm. Frequency 188.60 THz. FC-PC connector. Anode floating. |
NEC |
114 |
PB-IRF8910 |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
115 |
PB-IRF8915 |
Leaded 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
116 |
SC33F896 |
32bit ARM SC300 secure core with SPI interfaces and Nescrypt cryptoprocessor |
ST Microelectronics |
117 |
SRAF890 |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
118 |
ST33F896 |
32bit ARM SC300 secure core with SWP, SPI interfaces and Nescrypt cryptoprocessor |
ST Microelectronics |
119 |
XC2V1000-4FF896C |
Virtex-II 1.5V field programmable gate array. |
Xilinx |
120 |
XC2V1000-4FF896I |
Virtex-II 1.5V field programmable gate array. |
Xilinx |
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