| No. |
Part Name |
Description |
Manufacturer |
| 91 |
015Z5.6-Z |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 92 |
015Z6.2-X |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 93 |
015Z6.2-Y |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 94 |
015Z6.2-Z |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 95 |
015Z6.8-X |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 96 |
015Z6.8-Y |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 97 |
015Z6.8-Z |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 98 |
015Z7.5-X |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 99 |
015Z7.5-Y |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 100 |
015Z7.5-Z |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 101 |
015Z8.2-X |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 102 |
015Z8.2-Y |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 103 |
015Z8.2-Z |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 104 |
015Z9.1X |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 105 |
015Z9.1Y |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 106 |
015Z9.1Z |
Silicon diode for constant voltage regulation applications |
TOSHIBA |
| 107 |
01BZA8 |
DIODES (DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 108 |
01BZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
| 109 |
01ZA8 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 110 |
01ZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
| 111 |
01ZAB8.2 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 112 |
0202_XC62RP |
POSITIVE VOLTAGE REGULATORS FOR VOLTAGE REFRENCE SOURCE |
Torex Semiconductor |
| 113 |
021 |
Marking for NE02107 part number, 07 NEC package |
NEC |
| 114 |
021 |
Marking for NE02103(D) part number, 03 NEC package |
NEC |
| 115 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 116 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 117 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 118 |
0801-12 |
Marking for NE080190-12 part number, 90 NEC package |
NEC |
| 119 |
0804-12 |
Marking for NE080490-12 part number, 90 NEC package |
NEC |
| 120 |
0810-12 |
Marking for NE081090-12 part number, 90 NEC package |
NEC |
| | | |
