| No. |
Part Name |
Description |
Manufacturer |
| 91 |
FP210L100-22 |
Differential Magnetoresistive Sensor |
Infineon |
| 92 |
FP210L100-22 |
Differential Magnetoresistive Sensor |
Siemens |
| 93 |
FP211 |
NPN Epitaxial Planar Silicon Transistor Driver Applications |
SANYO |
| 94 |
FP211D155 |
Magneto Resistor |
Siemens |
| 95 |
FP212 |
PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications |
SANYO |
| 96 |
FP212D250-22 |
Differential Magnetoresistive Sensor |
Infineon |
| 97 |
FP212D250-22 |
Differential Magnetoresistive Sensor |
Siemens |
| 98 |
FP212L100-22 |
Differential Magnetoresistive Sensor |
Infineon |
| 99 |
FP212L100-22 |
Differential Magnetoresistive Sensor |
Siemens |
| 100 |
FP213 |
PNP Epitaxial Planar Silicon Transistor Motor Driver Applications |
SANYO |
| 101 |
FP214 |
NPN Epitaxial Planar Silicon Transistor Motor Driver Applications |
SANYO |
| 102 |
FP215 |
PNP Epitaxial Planar Silicon Composite Transistors High-Frequency Amp, Differential Amp Applications |
SANYO |
| 103 |
FP216 |
NPN Epitaxial Planar Silicon Transistor LCD Backlight Drive Applications |
SANYO |
| 104 |
FP2189 |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
WJ Communications |
| 105 |
FP2189-PCB1900S |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
WJ Communications |
| 106 |
FP2189-PCB2140S |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
WJ Communications |
| 107 |
FP2189-PCB900S |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
WJ Communications |
| 108 |
FP2800A |
Decoder Driver |
AZ Displays |
| 109 |
FP28D470 |
Field Plates |
Siemens |
| 110 |
FP28D470 |
Probe |
Siemens |
| 111 |
IRFP21N60L |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 112 |
IRFP220 |
N-Channel Power MOSFET |
Samsung Electronic |
| 113 |
IRFP221 |
N-Channel Power MOSFET |
Samsung Electronic |
| 114 |
IRFP222 |
N-Channel Power MOSFET |
Samsung Electronic |
| 115 |
IRFP223 |
N-Channel Power MOSFET |
Samsung Electronic |
| 116 |
IRFP22N50A |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 117 |
IRFP22N50APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 118 |
IRFP22N60K |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 119 |
IRFP22N60KPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 120 |
IRFP230 |
N-Channel Power MOSFET |
Samsung Electronic |
| | | |
