| No. |
Part Name |
Description |
Manufacturer |
| 91 |
A25FR25 |
STANDARD RECOVERY DIODES |
International Rectifier |
| 92 |
A25FR25M |
STANDARD RECOVERY DIODES |
International Rectifier |
| 93 |
AUIRFR2307Z |
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 94 |
AUIRFR2405 |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 95 |
AUIRFR2405TRL |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 96 |
AUIRFR2407 |
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 97 |
AUIRFR2407TR |
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 98 |
AUIRFR2607Z |
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 99 |
AUIRFR2905Z |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 100 |
BFR20 |
Professional transistor, general purpose switches |
SGS-ATES |
| 101 |
BFR20 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 102 |
BFR21 |
Professional transistor, general purpose switches |
SGS-ATES |
| 103 |
BFR21 |
Transistor for general purpose amplifiers |
SGS-ATES |
| 104 |
BFR28 |
NPN Transistor industrial type |
Siemens |
| 105 |
BFR280 |
RF-Bipolar - NPN Silicon RF transistor for low noise, low power amplifiers |
Infineon |
| 106 |
BFR280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 107 |
BFR280T |
Silicon NPN Planar RF Transistor |
Vishay |
| 108 |
BFR280TW |
Silicon NPN Planar RF Transistor |
Vishay |
| 109 |
BFR280W |
NPN Silicon RF Transistor for low noi... |
Infineon |
| 110 |
BFR280W |
RF-Bipolar - NPN Silicon RF transistor for low noise, low power amplifiers |
Infineon |
| 111 |
BFR280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
| 112 |
BFR29 |
Field effect transistor |
mble |
| 113 |
BFR29 |
Field effect transistor N-channel |
mble |
| 114 |
BFR29 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
| 115 |
CNY171FR2M |
6-Pin DIP High BVceo Phototransistor Output Optocoupler |
Fairchild Semiconductor |
| 116 |
CNY171FR2VM |
6-Pin DIP High BVceo Phototransistor Output Optocoupler |
Fairchild Semiconductor |
| 117 |
CNY172FR2M |
6-Pin DIP High BVceo Phototransistor Output Optocoupler |
Fairchild Semiconductor |
| 118 |
CNY172FR2VM |
6-Pin DIP High BVceo Phototransistor Output Optocoupler |
Fairchild Semiconductor |
| 119 |
CNY173FR2M |
6-Pin DIP High BVceo Phototransistor Output Optocoupler |
Fairchild Semiconductor |
| 120 |
CNY173FR2VM |
6-Pin DIP High BVceo Phototransistor Output Optocoupler |
Fairchild Semiconductor |
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