| No. |
Part Name |
Description |
Manufacturer |
| 91 |
Q62702-A1028 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 92 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 93 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 94 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 95 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 96 |
Q62702-A1105 |
Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad) |
Siemens |
| 97 |
Q62702-A1198 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 98 |
Q62702-A120 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 99 |
Q62702-A1261 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 100 |
Q62702-A1267 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 101 |
Q62702-A1268 |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 102 |
Q62702-A764 |
silicon schottky diode (RF detector, Low-power mixer, Zerobias, Very low capacitance, for frequencies up to 25 GHz) |
Siemens |
| 103 |
Q62702-A786 |
Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
Siemens |
| 104 |
Q62702-A971 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.) |
Siemens |
| 105 |
Q62702-D3429 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 106 |
Q62702-D3431 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 107 |
Q62702-D3433 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 108 |
Q62702-D3435 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 109 |
Q62702-D3437 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) |
Siemens |
| 110 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 111 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 112 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 113 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 114 |
S042P |
Symmetrical mixer for frequencies up to 200MHz |
Siemens |
| 115 |
TBB042G |
Symmetrical mixer applicable for frequencies up to 200MHz |
Siemens |
| 116 |
TC1235 |
The TC1235/1236/1237 are CMOS dual inverting charge pump voltage converters with a low power shutdown mode in MSOP 10-Pin packages. Only four external capaci-tors are required for full circuit implementation. Switching frequencies are 12kH |
Microchip |
| 117 |
TC1236 |
The TC1235/1236/1237 are CMOS dual inverting charge pump voltage converters with a low power shutdown mode in MSOP 10-Pin packages. Only four external capaci-tors are required for full circuit implementation. Switching frequencies are 12kH |
Microchip |
| 118 |
TC1237 |
The TC1235/1236/1237 are CMOS dual inverting charge pump voltage converters with a low power shutdown mode in MSOP 10-Pin packages. Only four external capaci-tors are required for full circuit implementation. Switching frequencies are 12kH |
Microchip |
| 119 |
TDA4867J |
Supply voltage: 8.2 to 25V; 2.5mA; full bridge current driven vertical deflection booster for frame frequencies of 50 to 200Hz |
TOSHIBA |
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