| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N4149 |
GLASS-CASE, FAST SWITCHING DIODE Equivalent type 1N916 |
IPRS Baneasa |
| 92 |
1N4149 |
Silicon Epitaxial Planar Switching Diode |
ITT Semiconductors |
| 93 |
1N4149 |
Switching Diode |
ITT Semiconductors |
| 94 |
1N4149 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 95 |
1N4149 |
Glass passivated silicon switching diodes for medium and small currents |
Texas Instruments |
| 96 |
1N4150 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 97 |
1N4150 |
SWITCHING DIODES |
Compensated Devices Incorporated |
| 98 |
1N4150 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If |
Continental Device India Limited |
| 99 |
1N4150 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 100 |
1N4150 |
Switching Diodes |
Diodes |
| 101 |
1N4150 |
Switching Diode |
ITT Semiconductors |
| 102 |
1N4150 |
SWITCHING DIODES |
Micro Commercial Components |
| 103 |
1N4150 |
SMALL SIGNAL SWITCHING DIODE |
Shanghai Sunrise Electronics |
| 104 |
1N4150 |
Fast Switching Diode |
Vishay |
| 105 |
1N4150-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
| 106 |
1N4150-1 |
SWITCHING DIODES |
Compensated Devices Incorporated |
| 107 |
1N4150-1 |
Silicon Switching Diode DO-35 Glass Package |
Microsemi |
| 108 |
1N41501N457A |
Silicon Switching Diode DO-35 Glass Package |
Microsemi |
| 109 |
1N4150UR-1 |
SWITCHING DIODE |
Compensated Devices Incorporated |
| 110 |
1N4150W |
SURFACE MOUNT SWITCHING DIODES |
Panjit International Inc |
| 111 |
1N4150W |
SURFACE MOUNT FAST SWITCHING DIODE |
Won-Top Electronics |
| 112 |
1N4150W-T1 |
SURFACE MOUNT FAST SWITCHING DIODE |
Won-Top Electronics |
| 113 |
1N4150W-T3 |
SURFACE MOUNT FAST SWITCHING DIODE |
Won-Top Electronics |
| 114 |
1N4151 |
Silicon epitaxial planar switching diode. Electrically it resembles the 1N3604 |
AEG-TELEFUNKEN |
| 115 |
1N4151 |
SMALL SIGNAL SWITCHING DIODE |
Chenyi Electronics |
| 116 |
1N4151 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 50mA If |
Continental Device India Limited |
| 117 |
1N4151 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 118 |
1N4151 |
Switching Diodes |
Diodes |
| 119 |
1N4151 |
High speed switching diode |
IPRS Baneasa |
| 120 |
1N4151 |
Silicon switching diode |
IPRS Baneasa |
| | | |
