| No. |
Part Name |
Description |
Manufacturer |
| 91 |
DS28DG02G-3C+ |
2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog |
MAXIM - Dallas Semiconductor |
| 92 |
DS28DG02G-3C+T |
2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog |
MAXIM - Dallas Semiconductor |
| 93 |
FMG-32R |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 94 |
FMG-32S |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 95 |
FMG-32S, R |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 96 |
FMG-33R |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 97 |
FMG-33S |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 98 |
FMG-33S, R |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 99 |
FMG-33SR |
Ultra-Fast-Recovery Rectifier Diodes |
Unknow |
| 100 |
FMG-34R |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 101 |
FMG-34S |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 102 |
FMG-34S, R |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 103 |
FMG-36R |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 104 |
FMG-36S |
Ultra-Fast-Recovery Rectifier Diodes |
Sanken |
| 105 |
G-300 |
Microwave Garnets Aluminum Doped |
Skyworks Solutions |
| 106 |
G-310 |
PHOTO INTERRUPTERS |
etc |
| 107 |
G-350 |
Microwave Garnets Aluminum Doped |
Skyworks Solutions |
| 108 |
G3A |
Diode Switching 50V 3A 2-Pin Case G-3 |
New Jersey Semiconductor |
| 109 |
G3B |
Diode Switching 100V 3A 2-Pin Case G-3 |
New Jersey Semiconductor |
| 110 |
G3D |
Diode Switching 200V 3A 2-Pin Case G-3 |
New Jersey Semiconductor |
| 111 |
G3M |
Diode Switching 800V 3A 2-Pin Case G-3 |
New Jersey Semiconductor |
| 112 |
HDLG-3416 |
HDLG-3416 · Four Character 6.9mm(0.27inch) Smart 5x7 Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 113 |
HDLG-3416 |
HDLG-3416 · Four Character 6.9mm(0.27inch) Smart 5x7 Alphanumeric Displays |
Agilent (Hewlett-Packard) |
| 114 |
HN27512G-30 |
512K (64K X 8 BIT ) UV AND OTP EPROM |
Hitachi Semiconductor |
| 115 |
HN27C256G-30 |
256K (32K x 8-bit) UV EPROM, 300ns |
Hitachi Semiconductor |
| 116 |
HN482732AG-30 |
4096-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 117 |
HN482764G-3 |
8192-word x 8-bit U.V. Erasable and Programmable Read Only Memory |
Hitachi Semiconductor |
| 118 |
HYB18D128160TG-3 |
MEMORY SPECTRUM |
Infineon |
| 119 |
HYB18D128160TG-37 |
MEMORY SPECTRUM |
Infineon |
| 120 |
HYB18D128800TG-3 |
MEMORY SPECTRUM |
Infineon |
| | | |
