| No. |
Part Name |
Description |
Manufacturer |
| 91 |
APT8018 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 92 |
APT8030 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 93 |
APT8065 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 94 |
APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 95 |
BC445 |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 96 |
BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 97 |
BC447 |
V(ceo): 80V; V(cbo): 80V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 98 |
BC447A |
V(ceo): 80V; V(cbo): 80V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 99 |
BC447B |
V(ceo): 80V; V(cbo): 80V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 100 |
BC449 |
V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 101 |
BC449A |
V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 102 |
BC449B |
V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 103 |
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE. |
Continental Device India Limited |
| 104 |
BD385 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
| 105 |
BD387 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
| 106 |
BD389 |
DUOWATT package NPN silicon ANNULAR amplifier transistor |
Motorola |
| 107 |
BD6111FV |
Regulator LSIs > Variable output voltage negative output regulator |
ROHM |
| 108 |
BF370R |
0.500W High Voltage NPN Plastic Leaded Transistor. 15V Vceo, 0.100A Ic, 40 hFE. |
Continental Device India Limited |
| 109 |
BF393 |
0.625W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 hFE. |
Continental Device India Limited |
| 110 |
BF420 |
0.800W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 111 |
BF422 |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 112 |
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 113 |
BF720 |
Small Signal High Voltage NPN |
ON Semiconductor |
| 114 |
BF720T1 |
Small Signal High Voltage NPN |
ON Semiconductor |
| 115 |
BF720T3 |
Small Signal High Voltage NPN |
ON Semiconductor |
| 116 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 117 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 118 |
BSP19AT1 |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT |
Motorola |
| 119 |
BSP20AT1 |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT |
Motorola |
| 120 |
BTA40-600B |
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR |
SGS Thomson Microelectronics |
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