No. |
Part Name |
Description |
Manufacturer |
91 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
92 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
93 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
94 |
1888-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
95 |
1888-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
96 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
97 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
98 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
99 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
100 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
ST Microelectronics |
101 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
102 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
ST Microelectronics |
103 |
1898 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
104 |
1898 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
105 |
1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
106 |
1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
107 |
1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
108 |
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
109 |
1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
110 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
111 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
112 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
113 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
114 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
115 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
116 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
117 |
1N5149 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
118 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
119 |
1N5150 |
Silicon high-frequency step-recovery power varactor for 100MHz to 2.0 GHz harmonic-generation applications, output power to 25W al 1GHz |
Motorola |
120 |
1N5154 |
Silicon high-frequency step-recovery power varactor, for multiplier applications from 2 to 8.5 GHz |
Motorola |
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