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Datasheets for HI S

Datasheets found :: 8679
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 1S2076A Small Signal Hitachi Semiconductor
92 1S2076A Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V Hitachi Semiconductor
93 1S2090 Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC Hitachi Semiconductor
94 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
95 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
96 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
97 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
98 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
99 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
100 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
101 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
102 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
103 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
104 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
105 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
106 1S689 Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
107 1S689A Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar Hitachi Semiconductor
108 1S750 Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer Hitachi Semiconductor
109 1S752H Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source Hitachi Semiconductor
110 1S753H Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source Hitachi Semiconductor
111 1S754H Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
112 1S755H Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
113 1S756H Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
114 1S757H Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
115 1S758H Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
116 1S759H Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
117 1S760H Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
118 1S761H Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
119 1S762H Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
120 1S763H Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source Hitachi Semiconductor


Datasheets found :: 8679
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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