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Datasheets for HZ T

Datasheets found :: 2936
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2023-6 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
92 2124-12L 12 W, 22 V, 2200-2400 MHz common base transistor GHz Technology
93 2223-1.7 1.7 W, 24 V, 2200-2300 MHz common base transistor GHz Technology
94 2223-9A 9 W, 24 V, 2200-2300 MHz common base transistor GHz Technology
95 2224-12L 12 W, 22 V, 2200-2400 MHz common base transistor GHz Technology
96 2225-4L 3.5 W, 24 V, 2200-2500 MHz common base transistor GHz Technology
97 2302 2.0 Watt - 20 Volts, Class C Microwave 2300 MHz GHz Technology
98 2304 4 W, 20 V, 2300 MHz common base transistor GHz Technology
99 2307 7 W, 20 V, 2300 MHz common base transistor GHz Technology
100 2324-12L 12 W, 20 V, 2300-2400 MHz common base transistor GHz Technology
101 2324-20 20 W, 24 V, 2300-2400 MHz common base transistor GHz Technology
102 2324-5 5 W, 24 V, 2300-2400 MHz common base transistor GHz Technology
103 2327-1 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
104 2327-3 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
105 2327-5 Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications SGS Thomson Microelectronics
106 23A003 0.3 W, 15 V, 2300 MHz common emitter transistor GHz Technology
107 23A005 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
108 23A008 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
109 23A017 1.7 W, 20 V, 2300 MHz common emitter transistor GHz Technology
110 23A025 2.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
111 2425-25 25 W, 24 V, 2410-2470 MHz common base transistor GHz Technology
112 2N3375 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage VALVO
113 2N3632 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage VALVO
114 2N3926 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage VALVO
115 2N3927 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage VALVO
116 2N4427 Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage VALVO
117 2N918 hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W SGS Thomson Microelectronics
118 2SC116T Silicon Transistor NPN Triple Diffued Planar, intended for use in 27MHz Transceiver Power Output Hitachi Semiconductor
119 2SC150T Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output Hitachi Semiconductor
120 2SC608T Silicon NPN Triple Diffused, intendend for use in 27MHz Transceiver Power Output Hitachi Semiconductor


Datasheets found :: 2936
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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