No. |
Part Name |
Description |
Manufacturer |
91 |
HM6216255HJPI-12 |
4M high Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
92 |
HM6216255HTTI-12 |
4M high Speed SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
93 |
HM6264BLFPI-12T |
64k SRAM (8-kword x 8-bit) Wide Temperature Range version |
Hitachi Semiconductor |
94 |
HM6264BLPI-12 |
64k SRAM (8-kword x 8-bit) Wide Temperature Range version |
Hitachi Semiconductor |
95 |
HM628511HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
96 |
HM628511HJPI-12 |
4M High Speed SRAM (512-kword x 8-bit) |
Hitachi Semiconductor |
97 |
HM62W16255HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
98 |
HM62W16255HCTTI-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
99 |
HM62W8511HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM |
Renesas |
100 |
KM681002AI-12 |
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. |
Samsung Electronic |
101 |
KM681002BI-12 |
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. |
Samsung Electronic |
102 |
KM681002CI-12 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
103 |
KM681002CI_CLI-12 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
104 |
KM681002CJI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
105 |
KM681002CLI-12 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
106 |
KM681002CLJI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
107 |
KM681002CLTI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
108 |
KM681002CTI-12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
109 |
KM68257EI-12 |
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
110 |
KM68257EJI-12 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns |
Samsung Electronic |
111 |
KM68257ETGI-12 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns |
Samsung Electronic |
112 |
M5M29GB640C3BTI-12 |
3.3V ONLY FLASHMEMORY |
etc |
113 |
M5M29GB640C3BXAI-12 |
3.3V ONLY FLASHMEMORY |
etc |
114 |
M5M29GB640C3TTI-12 |
3.3V ONLY FLASHMEMORY |
etc |
115 |
M5M29GB640C3TXAI-12 |
3.3V ONLY FLASHMEMORY |
etc |
116 |
MX23C1010QI-12 |
1M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
117 |
MX23C3210TI-12 |
Access time: 120; 5 volt, 32-Mbit (4M x 8/2M x 16) mask ROM |
Macronix International |
118 |
MX23L1610TI-12 |
Access time: 120; 3.3 volt, 16-Mbit (2M x 8/1M x 16) mask ROM |
Macronix International |
119 |
MX23L1611MI-12 |
Access time: 120; 3.3 volt, 16-Mbit (2M x 8/1M x 16) mask ROM with page mode |
Macronix International |
120 |
MX23L1611TI-12 |
Access time: 120; 3.3 volt, 16-Mbit (2M x 8/1M x 16) mask ROM with page mode |
Macronix International |
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