No. |
Part Name |
Description |
Manufacturer |
91 |
HI-201HS/883 |
Analog Switch, SPST, Quad, NClosed, Ron = 30, TTL Inputs, High Speed, Ton 30ns, 80mA Signal Current, CMOS, 883 Compliant |
Intersil |
92 |
HI-201HS/883 |
Analog Switch, SPST, Quad, NClosed, Ron = 30, TTL Inputs, High Speed, Ton 30ns, 80mA Signal Current, CMOS, 883 Compliant |
Intersil |
93 |
KM681002AI-20 |
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. |
Samsung Electronic |
94 |
KM681002CI-20 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
95 |
KM681002CI_CLI-20 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
96 |
KM681002CJI-20 |
128K x 8 high speed static RAM, 5V operating, 20ns |
Samsung Electronic |
97 |
KM681002CLI-20 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
98 |
KM681002CLJI-20 |
128K x 8 high speed static RAM, 5V operating, 20ns, low power |
Samsung Electronic |
99 |
KM681002CLTI-20 |
128K x 8 high speed static RAM, 5V operating, 20ns, low power |
Samsung Electronic |
100 |
KM681002CTI-20 |
128K x 8 high speed static RAM, 5V operating, 20ns |
Samsung Electronic |
101 |
KM684002I-20 |
512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. |
Samsung Electronic |
102 |
KM75C104AHJI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
103 |
KM75C104AHNI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
104 |
KM75C104AJI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
105 |
KM75C104ALJI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
106 |
KM75C104ALNI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
107 |
KM75C104ANI-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
108 |
KM75C104API-20 |
20 ns, 5 V, CMOS FIFO with programmable flag |
Samsung Electronic |
109 |
MEM8129GI-20 |
128K x 8-bit EEPROM, 200ns |
MSI Electronics |
110 |
MEM8129JI-20 |
128K x 8-bit EEPROM, 200ns |
MSI Electronics |
111 |
MEM8129SI-20 |
128K x 8-bit EEPROM, 200ns |
MSI Electronics |
112 |
MEM8129VI-20 |
128K x 8-bit EEPROM, 200ns |
MSI Electronics |
113 |
MEM8129WI-20 |
128K x 8-bit EEPROM, 200ns |
MSI Electronics |
114 |
MI-200 |
Military DC-DC Converters 50 to 100W |
Vicor Corporation |
115 |
MRF652 |
Trans GP BJT NPN 16V 2A 3-Pin NI-200Z |
New Jersey Semiconductor |
116 |
MVI-2097 |
Silicon EPICAP MICRO-I Diode 30V |
Motorola |
117 |
MVI-2098 |
Silicon EPICAP MICRO-I Diode 30V |
Motorola |
118 |
MVI-2099 |
Silicon EPICAP MICRO-I Diode 30V |
Motorola |
119 |
MX23L4000MI-20 |
4M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
120 |
MX23L4000TI-20 |
4M-BIT MASK ROM (8 BIT OUTPUT) |
Macronix International |
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