| No. |
Part Name |
Description |
Manufacturer |
| 91 |
PVX-2505 |
50V, 10A precision pulsed I-V pulse generator |
IXYS |
| 92 |
RC5058 |
High Performance Programmable Synchronous DC-DC Controller for Multi-Voltage Platforms |
Fairchild Semiconductor |
| 93 |
RC5061 |
High Performance Programmable Synchronous DC-DC Controller for Multi-Voltage Platforms |
Fairchild Semiconductor |
| 94 |
RC5061M |
High Performance Programmable Synchro0us DC-DC Controller for Multi-Voltage Platforms |
Fairchild Semiconductor |
| 95 |
RC5061MT |
High Performance Programmable Synchro0us DC-DC Controller for Multi-Voltage Platforms |
Fairchild Semiconductor |
| 96 |
TAS2552 |
4W Class-D Audio Power Amplifier with Speaker I-V Sense and Integrated Class-G Boost Converter 30-DSBGA -40 to 85 |
Texas Instruments |
| 97 |
TAS2552YFFR |
4W Class-D Audio Power Amplifier with Speaker I-V Sense and Integrated Class-G Boost Converter 30-DSBGA -40 to 85 |
Texas Instruments |
| 98 |
TAS2552YFFT |
4W Class-D Audio Power Amplifier with Speaker I-V Sense and Integrated Class-G Boost Converter 30-DSBGA -40 to 85 |
Texas Instruments |
| 99 |
TC554001AI-V |
SRAM - Low Power |
TOSHIBA |
| 100 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 101 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 102 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 103 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 104 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 105 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 106 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 107 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 108 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 109 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 110 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 111 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 112 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 113 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 114 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 115 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 116 |
X25138PI-V |
5MHz SPI Serial E2PROM with Block Lock PROTECTION |
Xicor |
| 117 |
X25138S14I-V |
5MHz SPI Serial E2PROM with Block Lock PROTECTION |
Xicor |
| 118 |
X25138S8I-V |
5MHz SPI Serial E2PROM with Block Lock PROTECTION |
Xicor |
| 119 |
X25138V8I-V |
5MHz SPI Serial E2PROM with Block Lock PROTECTION |
Xicor |
| 120 |
X25138ZI-V |
5MHz SPI Serial E2PROM with Block Lock PROTECTION |
Xicor |
| | | |
