No. |
Part Name |
Description |
Manufacturer |
91 |
BFT24 |
NPN transistor, intended for use in UHF low power amplifiers such as in pocket phones, paging systems, etc. |
Philips |
92 |
BGD502 |
550 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
93 |
BGD502 |
550 MHz, 18.5 dB gain power doubler amplifier |
Philips |
94 |
BGD702 |
750 MHz, 18.5 dB gain power doubler amplifier |
Philips |
95 |
BGD702N |
750 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
96 |
BGD702N |
750 MHz, 18.5 dB gain power doubler amplifier |
Philips |
97 |
BGD704 |
750 MHz, 20 dB gain power doubler amplifier |
Philips |
98 |
BGD712 |
750 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
99 |
BGD712 |
750 MHz, 18.5 dB gain power doubler amplifier |
Philips |
100 |
BGD712C |
750 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
101 |
BGD714 |
750 MHz, 20.3 dB gain power doubler amplifier |
NXP Semiconductors |
102 |
BGD714 |
750 MHz, 20.3 dB gain power doubler amplifier |
Philips |
103 |
BGD802 |
860 MHz, 18.5 dB gain power doubler amplifier |
Philips |
104 |
BGD804 |
860 MHz, 20 dB gain power doubler amplifier |
Philips |
105 |
BGD812 |
870 MHz, 18.5 dB gain power doubler amplifier |
NXP Semiconductors |
106 |
BGD812 |
860 MHz, 18.5 dB gain power doubler amplifier |
Philips |
107 |
BGD814 |
870 MHz, 20 dB gain power doubler amplifier |
NXP Semiconductors |
108 |
BGD814 |
860 MHz, 20 dB gain power doubler amplifier |
Philips |
109 |
BGD816L |
860 MHz, 21.5 dB gain power doubler amplifier |
NXP Semiconductors |
110 |
BGD885 |
860 MHz, 17 dB gain power doubler amplifier |
Philips |
111 |
BGD902 |
860 MHz, 18.5 dB gain power doubler amplifier |
Philips |
112 |
BGD902L |
860 MHz, 18.5 dB gain power doubler amplifier |
Philips |
113 |
BGD904 |
860 MHz, 20 dB gain power doubler amplifier |
Philips |
114 |
BGD904L |
860 MHz, 20 dB gain power doubler amplifier |
Philips |
115 |
BGD906 |
860 MHz, 21.5 dB gain power doubler amplifier |
Philips |
116 |
BSV60 |
Silicon NPN epitaxial planar transistor especially for use in power amplifiers, high current switches and relaise driver stages |
AEG-TELEFUNKEN |
117 |
BU90002GWZ |
Step-down Switching regulators with Built-in Power MOSFET |
ROHM |
118 |
BU90002GWZ-E2 |
Step-down Switching regulators with Built-in Power MOSFET |
ROHM |
119 |
BU90003GWZ |
Step-down Switching regulators with Built-in Power MOSFET |
ROHM |
120 |
BU90003GWZ-E2 |
Step-down Switching regulators with Built-in Power MOSFET |
ROHM |
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