| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1SS395 |
Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application |
TOSHIBA |
| 92 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 93 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 94 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 95 |
1SS401 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 96 |
1SS402 |
Diode Silicon Epitaxial Schottoky Barrier Type High Speed Switching Applications |
TOSHIBA |
| 97 |
1SS403 |
Diode Silicon Epitaxial Schottoky Barrier Type High Voltage Switching Applications |
TOSHIBA |
| 98 |
1SS404 |
Diode Silicon Epitaxial Shottlky Barrire Type High Speed Switching Applications |
TOSHIBA |
| 99 |
1SV102 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 100 |
1SV103 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 101 |
1SV147 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE FM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 102 |
1SV149 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE AM RADIO BAND TUNING APPLICATIONS |
TOSHIBA |
| 103 |
1SV225 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 104 |
1SV228 |
Variable Capacitance Diode Electronic Tuning Applications of FM Receivers |
TOSHIBA |
| 105 |
1SV268 |
Transmitting, Receiving Antenna-switch Use PIN Diode Silicon Epitaxial Type |
SANYO |
| 106 |
1SV272 |
Transmitting, Receiving Antenna-switch Use PIN Diode Silicon Epitaxial Type |
SANYO |
| 107 |
1SV283B |
Variable capacitance diode for electronic tuning applications |
TOSHIBA |
| 108 |
2961 |
HIGH-CURRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER.WITH INTERNAL CURRENT SENSING AND CONTROL |
Allegro MicroSystems |
| 109 |
2N1008 |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 110 |
2N1008A |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 111 |
2N1008B |
PNP germanium transistor for audio driver and medium speed switching applications |
Motorola |
| 112 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 113 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 114 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 115 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 116 |
2N1073 |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V |
Motorola |
| 117 |
2N1073A |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V |
Motorola |
| 118 |
2N1073B |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V |
Motorola |
| 119 |
2N1131 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 120 |
2N1185 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
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