No. |
Part Name |
Description |
Manufacturer |
91 |
NX5307EK |
1310 nm InGaAsP MQW FP laser diode for 2.5 Gb/s intra-office application. |
NEC |
92 |
NX7315UA |
1310 nm InGaAsP MQW FP laser diode for 2.5 Gb/s intra-office application. |
NEC |
93 |
SL701B |
Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications |
PLESSEY Semiconductors |
94 |
SL701C |
Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications |
PLESSEY Semiconductors |
95 |
SL702B |
Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications |
PLESSEY Semiconductors |
96 |
SL702C |
Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications |
PLESSEY Semiconductors |
97 |
STD110 ASIC |
Introduction |
Samsung Electronic |
98 |
STD111 ASIC |
Introduction |
Samsung Electronic |
99 |
STD130 ASIC |
Introduction |
Samsung Electronic |
100 |
STD131 ASIC |
Introduction |
Samsung Electronic |
101 |
STD150 ASIC |
Introduction(Jan. 22, 2002) |
Samsung Electronic |
102 |
STD80 |
0.5 Micron STD80 Standard Cell Library Introduction |
Samsung Electronic |
103 |
STDH150 ASIC |
Introduction |
Samsung Electronic |
104 |
STDH90 |
0.35 Micron STDH90 Library Introduction |
Samsung Electronic |
105 |
STDL130 ASIC |
Introduction |
Samsung Electronic |
106 |
STDM110 ASIC |
Introduction |
Samsung Electronic |
107 |
TC1426 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
108 |
TC1427 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
109 |
TC1428 |
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic |
Microchip |
110 |
TPS5405 |
6.5V to 28V Input, 5V Fixed Output at 1A Step-Down Regulator with Intregrated MosFET |
Texas Instruments |
111 |
TPS5405DR |
6.5V to 28V Input, 5V Fixed Output at 1A Step-Down Regulator with Intregrated MosFET 8-SOIC -40 to 85 |
Texas Instruments |
112 |
WD8110 |
INTRODUCTION |
Western Digital |
113 |
WD8110LV |
INTRODUCTION |
Western Digital |
114 |
XC2S50E-SERIES |
Spartan-IIE 1.8V FPGA Family: Introduction and Ordering Information |
Xilinx |
115 |
XE1030 |
Single-in-line telephone line intrface for Europe (UK). |
XECOM |
116 |
XE1040 |
Single-in-line telephone line intrface for Europe (Germany). |
XECOM |
117 |
XE1050 |
Single-in-line telephone line intrface for Europe (France). |
XECOM |
118 |
XE1060 |
Single-in-line telephone line intrface for Europe (US, Canada, Japan). |
XECOM |
119 |
XE1070 |
Single-in-line telephone line intrface for Europe (Italy). |
XECOM |
120 |
XE1080 |
Single-in-line telephone line intrface for Europe (Spain). |
XECOM |
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