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Datasheets for INTR

Datasheets found :: 120
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No. Part Name Description Manufacturer
91 NX5307EK 1310 nm InGaAsP MQW FP laser diode for 2.5 Gb/s intra-office application. NEC
92 NX7315UA 1310 nm InGaAsP MQW FP laser diode for 2.5 Gb/s intra-office application. NEC
93 SL701B Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications PLESSEY Semiconductors
94 SL701C Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications PLESSEY Semiconductors
95 SL702B Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications PLESSEY Semiconductors
96 SL702C Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications PLESSEY Semiconductors
97 STD110 ASIC Introduction Samsung Electronic
98 STD111 ASIC Introduction Samsung Electronic
99 STD130 ASIC Introduction Samsung Electronic
100 STD131 ASIC Introduction Samsung Electronic
101 STD150 ASIC Introduction(Jan. 22, 2002) Samsung Electronic
102 STD80 0.5 Micron STD80 Standard Cell Library Introduction Samsung Electronic
103 STDH150 ASIC Introduction Samsung Electronic
104 STDH90 0.35 Micron STDH90 Library Introduction Samsung Electronic
105 STDL130 ASIC Introduction Samsung Electronic
106 STDM110 ASIC Introduction Samsung Electronic
107 TC1426 The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic Microchip
108 TC1427 The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic Microchip
109 TC1428 The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic Microchip
110 TPS5405 6.5V to 28V Input, 5V Fixed Output at 1A Step-Down Regulator with Intregrated MosFET Texas Instruments
111 TPS5405DR 6.5V to 28V Input, 5V Fixed Output at 1A Step-Down Regulator with Intregrated MosFET 8-SOIC -40 to 85 Texas Instruments
112 WD8110 INTRODUCTION Western Digital
113 WD8110LV INTRODUCTION Western Digital
114 XC2S50E-SERIES Spartan-IIE 1.8V FPGA Family: Introduction and Ordering Information Xilinx
115 XE1030 Single-in-line telephone line intrface for Europe (UK). XECOM
116 XE1040 Single-in-line telephone line intrface for Europe (Germany). XECOM
117 XE1050 Single-in-line telephone line intrface for Europe (France). XECOM
118 XE1060 Single-in-line telephone line intrface for Europe (US, Canada, Japan). XECOM
119 XE1070 Single-in-line telephone line intrface for Europe (Italy). XECOM
120 XE1080 Single-in-line telephone line intrface for Europe (Spain). XECOM


Datasheets found :: 120
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