| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 92 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 93 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 94 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 95 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 96 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 97 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 98 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 99 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 100 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 101 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 102 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 103 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 104 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 105 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 106 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 107 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 108 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 109 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 110 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 111 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 112 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 113 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 114 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 115 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 116 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 117 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 118 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 119 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 120 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
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