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Datasheets for ISTOR.

Datasheets found :: 4510
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |
No. Part Name Description Manufacturer
91 2N3392 NPN silicon transistor. 25V, 100mA. General Electric Solid State
92 2N3393 NPN silicon transistor. 25V, 100mA. General Electric Solid State
93 2N3394 NPN silicon transistor. 25V, 100mA. General Electric Solid State
94 2N3414 Silicon transistor. 25V, 500mA. General Electric Solid State
95 2N3415 0.360W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.500A Ic, 180 - 540 hFE Continental Device India Limited
96 2N3415 Silicon transistor. 25V, 500mA. General Electric Solid State
97 2N3416 Silicon transistor. 50V, 500mA. General Electric Solid State
98 2N3417 Silicon transistor. 50V, 500mA. General Electric Solid State
99 2N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
100 2N3439 High-voltage silicon N-P-N planar transistor. General Electric Solid State
101 2N3440 1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
102 2N3440 High-voltage silicon N-P-N planar transistor. General Electric Solid State
103 2N3441 Medium power silicon N-P-N transistor. 160V, 25W. General Electric Solid State
104 2N3442 High voltage silicon N-P-N transistor. 160V, 117W. General Electric Solid State
105 2N3478 0.200W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 25 - 150 hFE. Continental Device India Limited
106 2N3496 0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. Continental Device India Limited
107 2N3497 0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. Continental Device India Limited
108 2N3498 1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
109 2N3499 1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. Continental Device India Limited
110 2N3500 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. Continental Device India Limited
111 2N3501 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. Continental Device India Limited
112 2N3583 High-voltage silicon N-P-N transistor. General Electric Solid State
113 2N3585 High-voltage silicon N-P-N transistor. General Electric Solid State
114 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
115 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
116 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
117 2N3700 0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
118 2N3702 0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE Continental Device India Limited
119 2N3704 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE Continental Device India Limited
120 2N3705 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE Continental Device India Limited


Datasheets found :: 4510
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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