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Datasheets for J-45

Datasheets found :: 132
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
91 CAT93C8614J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
92 CAT93C8621J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
93 CAT93C8622J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
94 CAT93C8623J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
95 CAT93C8624J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
96 CAT93C8631J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
97 CAT93C8632J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
98 CAT93C8633J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
99 CAT93C8634J-45TE13 16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer Catalyst Semiconductor
100 EPJ9046-S9 RJ-45 FILTER PORT JACK 10/100BASE-TX etc
101 HY51V65163HGJ-45 4M x 16Bit EDO DRAM Hynix Semiconductor
102 HY51V65163HGLJ-45 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power Hynix Semiconductor
103 HY51VS65163HGJ-45 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns Hynix Semiconductor
104 HY51VS65163HGLJ-45 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power Hynix Semiconductor
105 HY534256AJ-45 256K x 4-bit CMOS DRAM, 45ns Hynix Semiconductor
106 HY534256ALJ-45 256K x 4-bit CMOS DRAM, 45ns, low power Hynix Semiconductor
107 HYB314265BJ-45 256K x 16-Bit EDO-Dynamic RAM Siemens
108 HYB514265BJ-45 256K x 16-Bit EDO-Dynamic RAM Siemens
109 KM416C1004BJ-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
110 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
111 KM416C1204BJ-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
112 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
113 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
114 KM416V1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms Samsung Electronic
115 MT5C1008DCJ-45/883C 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS Advanced Semiconductor
116 MT5C1008DCJ-45L/883C 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS Advanced Semiconductor
117 MT5C1008DCJ-45L_883C 128K x 8 SRAM with dual chip enable Austin Semiconductor
118 MT5C1008DCJ-45L_IT 128K x 8 SRAM with dual chip enable Austin Semiconductor
119 MT5C1008DCJ-45L_XT 128K x 8 SRAM with dual chip enable Austin Semiconductor
120 MT5C1008SOJ-45/883C 128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS Advanced Semiconductor


Datasheets found :: 132
Page: | 1 | 2 | 3 | 4 | 5 |



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