No. |
Part Name |
Description |
Manufacturer |
91 |
CAT93C8614J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
92 |
CAT93C8621J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
93 |
CAT93C8622J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
94 |
CAT93C8623J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
95 |
CAT93C8624J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
96 |
CAT93C8631J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
97 |
CAT93C8632J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
98 |
CAT93C8633J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
99 |
CAT93C8634J-45TE13 |
16K 4.5-4.75V Supervisory circuits with microwire serial CMOS EEPROM, precision reset controller and watchdog timer |
Catalyst Semiconductor |
100 |
EPJ9046-S9 |
RJ-45 FILTER PORT JACK 10/100BASE-TX |
etc |
101 |
HY51V65163HGJ-45 |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
102 |
HY51V65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
103 |
HY51VS65163HGJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
104 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
105 |
HY534256AJ-45 |
256K x 4-bit CMOS DRAM, 45ns |
Hynix Semiconductor |
106 |
HY534256ALJ-45 |
256K x 4-bit CMOS DRAM, 45ns, low power |
Hynix Semiconductor |
107 |
HYB314265BJ-45 |
256K x 16-Bit EDO-Dynamic RAM |
Siemens |
108 |
HYB514265BJ-45 |
256K x 16-Bit EDO-Dynamic RAM |
Siemens |
109 |
KM416C1004BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
110 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
111 |
KM416C1204BJ-45 |
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns |
Samsung Electronic |
112 |
KM416C1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms |
Samsung Electronic |
113 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
114 |
KM416V1204CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16ms |
Samsung Electronic |
115 |
MT5C1008DCJ-45/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
116 |
MT5C1008DCJ-45L/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
117 |
MT5C1008DCJ-45L_883C |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
118 |
MT5C1008DCJ-45L_IT |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
119 |
MT5C1008DCJ-45L_XT |
128K x 8 SRAM with dual chip enable |
Austin Semiconductor |
120 |
MT5C1008SOJ-45/883C |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS |
Advanced Semiconductor |
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