| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2SK3296-ZJ |
Power MOS FET |
NEC |
| 92 |
2SK3296-ZK |
Power MOS FET |
NEC |
| 93 |
2SK3297 |
Power MOS FET |
NEC |
| 94 |
2SK3298 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 95 |
2SK3299 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 96 |
2SK3299-S |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 97 |
2SK3299-Z |
N-ch Power MOS FET |
NEC |
| 98 |
2SK3299-Z-E1 |
N-ch Power MOS FET |
NEC |
| 99 |
2SK3299-ZJ |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 100 |
2SK3299-ZJ-E2 |
N-ch Power MOS FET |
NEC |
| 101 |
3SK320 |
RF Dual Gate FETs |
TOSHIBA |
| 102 |
3SK321 |
Silicon N-Channel Dual Gate MOS FET |
Hitachi Semiconductor |
| 103 |
3SK322 |
Silicon N-Channel Dual Gate MOS FET |
Hitachi Semiconductor |
| 104 |
5962-0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none |
Aeroflex Circuit Technology |
| 105 |
5962-0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none |
Aeroflex Circuit Technology |
| 106 |
5962-0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 107 |
5962-0153301TXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none |
Aeroflex Circuit Technology |
| 108 |
5962D0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 109 |
5962D0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 110 |
5962D0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 111 |
5962D0153301TXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 112 |
5962L0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 113 |
5962L0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 114 |
5962L0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 115 |
5962L0153301TXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 116 |
5962P0151101QXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 117 |
5962P0151101TXC |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 118 |
5962P0153301QXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 119 |
5962P0153301TXC |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 120 |
73K321L |
CCITT V.23, V.21 Single-Chip Modem |
TDK Semiconductor |
| | | |
