| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 92 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 93 |
1SS239 |
Silicon epitaxial schottky barrier type diode, marking S1 |
TOSHIBA |
| 94 |
1SS241 |
Silicon Epitaxial Planar Type Diode, marking TY |
TOSHIBA |
| 95 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 96 |
1SS371 |
Silicon epitaxial planar type diode for VHF tuner band switch applications, marking TY |
TOSHIBA |
| 97 |
1SV153A |
Silicon epitaxial planar type variable capacitance diode, marking T5 |
TOSHIBA |
| 98 |
1SV161 |
Silicon Epitaxial planar type variable capacitance diode, marking T2 |
TOSHIBA |
| 99 |
1SV186 |
Silicon Epitaxial planar type variable capacitance diode, marking T3 |
TOSHIBA |
| 100 |
1SV204 |
Silicon Epitaxial planar type variable capacitance diode, marking T4 |
TOSHIBA |
| 101 |
1SV211 |
Silicon Epitaxial planar type variable capacitance diode for CATV tuning, marking T6 |
TOSHIBA |
| 102 |
1SV212 |
Silicon Epitaxial planar type variable capacitance diode for VCO for UHF band radio, marking T8 |
TOSHIBA |
| 103 |
1SV224 |
Silicon Epitaxial planar type variable capacitance diode, marking T7 |
TOSHIBA |
| 104 |
1SV226 |
Silicon Epitaxial planar type variable capacitance diode, marking TA |
TOSHIBA |
| 105 |
1SV227 |
Silicon Epitaxial planar type variable capacitance diode for CATV tuning, marking T9 |
TOSHIBA |
| 106 |
1SV238 |
Silicon Epitaxial planar type variable capacitance diode, marking TB |
TOSHIBA |
| 107 |
1SV254 |
Silicon Epitaxial planar type variable capacitance diode for TV tuning, marking T1 |
TOSHIBA |
| 108 |
1SV255 |
Silicon Epitaxial planar type variable capacitance diode, marking T2 |
TOSHIBA |
| 109 |
1SV256 |
Silicon Epitaxial planar type variable capacitance diode, marking T4 |
TOSHIBA |
| 110 |
1SV258 |
Silicon Epitaxial planar type variable capacitance diode, case 1-1F1A, marking T7 |
TOSHIBA |
| 111 |
1SV259 |
Silicon Epitaxial planar type variable capacitance diode, marking T9 |
TOSHIBA |
| 112 |
1SV260 |
Silicon Epitaxial planar type variable capacitance diode, marking TC |
TOSHIBA |
| 113 |
1SV261 |
Silicon Epitaxial planar type variable capacitance diode, marking T3 |
TOSHIBA |
| 114 |
1SV274 |
Silicon Epitaxial planar type variable capacitance diode, marking TD |
TOSHIBA |
| 115 |
1SV275 |
Silicon Epitaxial planar type variable capacitance diode, marking TE |
TOSHIBA |
| 116 |
1X |
Marking for NE68035 part number, 35 NEC (MICRO-X) package, X=LOT CODE |
NEC |
| 117 |
2002A |
Marking for NE73432 part number, 32 NEC (TO-92) package |
NEC |
| 118 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
| 119 |
20NAB06 |
3-phase bridge rectifier +braking chopper +3-phase bridge inverter |
Semikron |
| 120 |
20NAB12 |
3-phase bridge rectifier +braking chopper +3-phase bridge inverter |
Semikron |
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