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Datasheets for KMS

Datasheets found :: 120
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
91 HCTS244KMSR Radiation Hardened Octal Buffer/Line Driver/ Three-State Intersil
92 HCTS245KMSR Radiation Hardened Octal Bus Transceiver/ Three-State/ Non-Inverting Intersil
93 HCTS273KMSR Radiation Hardened Octal D Flip-Flop Intersil
94 HCTS27KMSR Radiation Hardened Triple 3-Input NOR Gate Intersil
95 HCTS299KMSR Radiation Hardened 8-Bit Universal Shift Register; Three-State Intersil
96 HCTS30KMSR Radiation Hardened 8-Input NAND Gate Intersil
97 HCTS32KMSR Radiation Hardened Quad 2-Input OR Gate Intersil
98 HCTS365KMSR Radiation Hardened Hex Buffer/Line Driver Non-Inverting Intersil
99 HCTS373KMSR Radiation Hardened Octal Transparent Latch/ Three-State Intersil
100 HCTS374KMSR Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered Intersil
101 HCTS390KMSR Radiation Hardened Dual Decade Ripple Counter Intersil
102 HCTS393KMSR Radiation Hardened Dual 4-Stage Binary Counter Intersil
103 HCTS4002KMSR Radiation Hardened Dual 4-Input NOR Gate Intersil
104 HCTS540KMSR Radiation Hardened Inverting Octal Buffer/Line Driver/ Three-State Intersil
105 HCTS541KMSR Radiation Hardened Non-Inverting Octal Buffer/Line Driver/ Three-State Intersil
106 HCTS574KMSR Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered Intersil
107 HCTS646KMSR Radiation Hardened Octal Bus Transceiver/Register/ Three-State Intersil
108 HCTS74KMSR Radiation Hardened Dual-D Flip-Flop with Set and Reset Intersil
109 HCTS75KMSR Radiation Hardened Dual 2-Bit Bistable Transparent Latch Intersil
110 HCTS85KMSR Radiation Hardened 4-Bit Magnitude Comparator Intersil
111 HCTS86KMSR Radiation Hardened Quad 2-Input Exclusive OR Gate Intersil
112 HCTS93KMSR Radiation Hardened 4-Bit Binary Ripple Counter Intersil
113 MAX6717UKMSD3-T Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
114 MAX6718UKMSD3-T Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit MAXIM - Dallas Semiconductor
115 MAX6736XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
116 MAX6737XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
117 MAX6740XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
118 MAX6741XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
119 MAX6743XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
120 MAX6744XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 120
Page: | 1 | 2 | 3 | 4 |



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