No. |
Part Name |
Description |
Manufacturer |
91 |
100371FCQR |
Low power triple 4-input multiplexer with enable. Commercial grade device with burn-in. |
National Semiconductor |
92 |
100371QCQR |
Low power triple 4-input multiplexer with enable. Commercial grade device with burn-in. |
National Semiconductor |
93 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
94 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
95 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
96 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
97 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
98 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
99 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
100 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
101 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
102 |
10SI2R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V |
IPRS Baneasa |
103 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
104 |
10SI3R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 300V |
IPRS Baneasa |
105 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
106 |
10SI4R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 400V |
IPRS Baneasa |
107 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
108 |
10SI5R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V |
IPRS Baneasa |
109 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
110 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
111 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
112 |
10SI7R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 700V |
IPRS Baneasa |
113 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
114 |
10SI8R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V |
IPRS Baneasa |
115 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
116 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
117 |
15SMC68A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
118 |
15SMC68CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 1500 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
119 |
195D |
Solid Tantalum Chip Capacitors, Conformal, Industrial Grade, TANTAMOUNT® Tantalum Chips with Conformal Terminals, Minimum size, Meets IEC Specification QC300801/US0002, 2 Standard Electroplate Terminations |
Vishay |
120 |
1N4187B |
110.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
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