No. |
Part Name |
Description |
Manufacturer |
91 |
ALD1110E |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
92 |
ALD1110EDA |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
93 |
ALD1110EPA |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
94 |
ALD1110ESA |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
95 |
ALD1121E |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
96 |
ALD1121EPA |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
97 |
ALD1121ESA |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
98 |
ALD1123E |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
99 |
ALD1123EPC |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
100 |
ALD1123ESC |
QUAD/DUAL EPAD� PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAY |
Advanced Linear Devices |
101 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
102 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
103 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
104 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
105 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
106 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
107 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
108 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
109 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
110 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
111 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
112 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
113 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
114 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
115 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
116 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
117 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
118 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
119 |
BF987 |
Silicon N-Channel MOSFET Triode |
Infineon |
120 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
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