| No. |
Part Name |
Description |
Manufacturer |
| 91 |
NX8563LB485 |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 92 |
NX8563LB485-BA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 93 |
NX8563LB485-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 94 |
NX8563LB4904-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1590.41 nm. Frequency 188.50 THz. FC-PC connector. Anode ground. |
NEC |
| 95 |
NX8563LB493 |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 96 |
NX8563LB493-BA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 97 |
NX8563LB493-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 98 |
TLB4902F |
Integrated Hall-Effect Switch for Alternating Magnetic Field |
Siemens |
| 99 |
VLB40-12F |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 100 |
VLB40-12S |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| | | |
