Datasheets for LSR

Datasheets found :: 104 Page: | 1 | 2 | 3 | 4 |

No.	Part Name	Description	Manufacturer
91	MRF9080LSR3	RF POWER FIELD EFFECT TRANSISTORS	Motorola
92	MRF9085	MRF9085, MRF9085R3, MRF9085SR3, MRF9085LSR3 880 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs	Motorola
93	MRF9085LSR3	880 MHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
94	MRF9085LSR3	880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs	Motorola
95	MRF9130L	MRF9130L, MRF9130LR3, MRF9130LSR3 GSM/EDGE 921-960 MHz, 130 W, 28 V Lateral N-Channel RF Power MOSFETs	Motorola
96	MRF9130LSR3	GSM/EDGE 921–960 MHz, 130 W, 28 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
97	MRF9130LSR3	RF Power Field Effect Transistors	Motorola
98	MRF9135L	MRF9135L, MRF9135LR3, MRF9135LSR3 880 MHz, 135 W, 26 V Lateral N-Channel RF Power MOSFETs	Motorola
99	MRF9135LSR3	880 MHz, 135 W, 26 V Lateral N–Channel RF Power MOSFET	Freescale (Motorola)
100	MRF9135LSR3	RF POWER FIELD EFFECT TRANSISTORS	Motorola
101	MRF9200LSR3	N−Channel Enhancement−Mode Lateral MOSFETs	Freescale (Motorola)
102	MRF9200LSR3	880 Mhz; 40W; V(dss): -0.5 to +65V; RF power field effect transistor	Motorola
103	TS3USB3000RLSR	DPDT USB 2.0 High-Speed and Mobile High-Definition Link (MHL) (6.1GHz) Switch 10-UQFN -40 to 85	Texas Instruments
104	W6NXD0KLSR-0000	Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition	CREE POWER

Datasheets found :: 104 Page: | 1 | 2 | 3 | 4 |