| No. |
Part Name |
Description |
Manufacturer |
| 91 |
M470T6554CZ3-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
| 92 |
M470T6554CZ3-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
| 93 |
RUR-D1620 |
Dual 16A, high-speed, high efficiency epitaxial silicon rectifier. Vrm 200V. |
General Electric Solid State |
| 94 |
RUR-D820 |
Dual 8-A, high-speed, high efficiency epitaxial silicon rectifier. VRM 200 V. |
General Electric Solid State |
| 95 |
S2600B |
High voltage, medium current silicon controlled rectifier. Vdrm 200V. |
General Electric Solid State |
| 96 |
S2800B |
10A silicon controlled rectifier. Vdrm, Vrrm 200V. |
General Electric Solid State |
| 97 |
T2300B |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 98 |
T2301B |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 99 |
T2302B |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 100 |
T2322B |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 101 |
T2500B |
High voltage, 6-A silicon triac. Vdrm 200 V. |
General Electric Solid State |
| 102 |
T2800B |
High voltage, 8-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 103 |
T2802B |
High voltage, 8-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 104 |
T6000B |
16-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 105 |
T6001B |
16-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 106 |
T6006B |
16-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| | | |
