No. |
Part Name |
Description |
Manufacturer |
91 |
28LV256TI-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
92 |
28LV256TI-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
93 |
28LV256TI-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
94 |
28LV256TM-3 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
95 |
28LV256TM-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
96 |
28LV256TM-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
97 |
28LV256TM-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
98 |
2N3651 |
35A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
99 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
100 |
2N685 |
25A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
101 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
102 |
54F410 |
Register Stack - 16x4 RAM 3-State Output Register |
Fairchild Semiconductor |
103 |
74F410 |
Register Stack - 16x4 RAM 3-State Output Register |
Fairchild Semiconductor |
104 |
74F410 |
Register stack . 16�4 RAM 3-State output register |
Philips |
105 |
82S123 |
256-bit TTL bipolar PROM 32 x 8 |
Philips |
106 |
82S23 |
256-bit TTL bipolar PROM 32 x 8 |
Philips |
107 |
ACS8520 |
Synchronous Equipment Timing Source for Stratum 3/4E/4 and SMC Systems |
Semtech |
108 |
AD6432 |
GSM 3 V Transceiver IF Subsystem |
Analog Devices |
109 |
AD6432AST |
GSM 3 V Transceiver IF Subsystem |
Analog Devices |
110 |
AD6458 |
GSM 3 V Receiver IF Subsystem |
Analog Devices |
111 |
AD6458ARS |
GSM 3 V Receiver IF Subsystem |
Analog Devices |
112 |
AD6459 |
GSM 3 V Receiver IF Subsystem |
Analog Devices |
113 |
AD6459ARS |
GSM 3 V Receiver IF Subsystem |
Analog Devices |
114 |
AD8152 |
X Stream 34 x 34, 3.2 Gb/s Digital Crosspoint Switch |
Analog Devices |
115 |
AM29LV256M |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
Advanced Micro Devices |
116 |
AN87C196CA |
Advanced 16-bit CHMOS microcontroller. EPROM 32K, Reg RAM 1.0K, Code RAM 256, I/O 38 |
Intel |
117 |
AN87C196JQ |
Advanced 16-bit CHMOS microcontroller. EPROM 12K, Reg RAM 360, Code RAM 128, I/O 41 |
Intel |
118 |
AN87C196JT |
Advanced 16-bit CHMOS microcontroller. EPROM 32K, Reg RAM 1.0K, Code RAM 512, I/O 41 |
Intel |
119 |
AN87C196KQ |
Advanced 16-bit CHMOS microcontroller. EPROM 12K, Reg RAM 3608, Code RAM 128, I/O 56 |
Intel |
120 |
AS4LC1M16 |
1 MEG x 16 DRAM 3.3V, EDO PAGE MODE, OPTIONAL EXTENDED REFRESH |
Austin Semiconductor |
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