| No. |
Part Name |
Description |
Manufacturer |
| 91 |
MB108 |
10A, 800V ultra fast recovery rectifier |
MCC |
| 92 |
MB108 |
10 Amp Single Phase Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 93 |
MB10F |
Bridge Rectifier |
Rectron Semiconductor |
| 94 |
MB10M |
0.5Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 95 |
MB10S |
0.5A Bridge Rectifier |
Fairchild Semiconductor |
| 96 |
MB10S |
0.5Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts |
Micro Commercial Components |
| 97 |
MB10S |
Bridge Rectifier |
Rectron Semiconductor |
| 98 |
MB10S-G |
Bridge Rectifiers, VRRM=1000V, VDC=1000V, I(AV)=0.8A |
Comchip Technology |
| 99 |
P6SMB10 |
TVS: Unidirectional |
Taiwan Semiconductor |
| 100 |
P6SMB100 |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 100V. 600W peak power, 3.0W steady state. |
Motorola |
| 101 |
P6SMB100 |
TVS: Unidirectional |
Taiwan Semiconductor |
| 102 |
P6SMB100A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 103 |
P6SMB100A |
Plastic surface mount zener overvoltage transient suppressor. Nom breakdown voltage 100V. 600W peak power, 3.0W steady state. |
Motorola |
| 104 |
P6SMB100A |
High Power Transient Suppressor |
ON Semiconductor |
| 105 |
P6SMB100A |
TVS: Unidirectional |
Taiwan Semiconductor |
| 106 |
P6SMB100AT3 |
High Power Transient Suppressor |
ON Semiconductor |
| 107 |
P6SMB100C |
TVS: Bidirectional |
Taiwan Semiconductor |
| 108 |
P6SMB100CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 109 |
P6SMB100CA |
TVS: Bidirectional |
Taiwan Semiconductor |
| 110 |
P6SMB10A |
UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 111 |
P6SMB10A |
High Power Transient Suppressor |
ON Semiconductor |
| 112 |
P6SMB10A |
TVS: Unidirectional |
Taiwan Semiconductor |
| 113 |
P6SMB10AT3 |
High Power Transient Suppressor |
ON Semiconductor |
| 114 |
P6SMB10C |
TVS: Bidirectional |
Taiwan Semiconductor |
| 115 |
P6SMB10CA |
BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 6.8 THRU 200 VOLTS |
Central Semiconductor |
| 116 |
P6SMB10CA |
TVS: Bidirectional |
Taiwan Semiconductor |
| 117 |
PEMB10 |
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ |
Nexperia |
| 118 |
PEMB10 |
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ |
NXP Semiconductors |
| 119 |
PEMB10 |
PNP resistor-equipped double transistor R1 = 2.2 kOhm, R2 = 47 kOhm |
Philips |
| 120 |
PUMB10 |
PNP/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ |
Nexperia |
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